Browsing by Author "Luysberg, M."
- Results Per Page
- Sort Options
Publication Dislocation nucleation and movement in helium implanted SiGe/Si(001)Heterostructures studied by in-situ TEM
;Hueging, N. ;Luysberg, M. ;Urban, K. ;Buca, D. ;Holländer, B. ;Mantl, S.Morschbacher, M.Oral presentation2004, Dislocation MeetingPublication Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
;Driussi, F. ;Esseni, D. ;Selmi, L. ;Schmidt, M. ;Lemme, M. ;Kurz, H. ;Buca, D. ;Mantl, S.Luysberg, M.Proceedings paper2007, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007, p.315-318Publication He implantation induced relaxation of SiGe/Si: nucleation of dislocations and coarsening of He bubbles
;Luysberg, M. ;Hueging, N. ;Urban, K. ;Buca, D. ;Holländer, B. ;Mantl, S.Morschbacher, M.Proceedings paper2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 17/05/2004, p.117-118Publication Large current enhancement in n-MOSFETs with strained Si on insulator
;Mantl, S. ;Buca, D. ;Zhao, Q.T. ;Hollaender, B. ;Feste, S. ;Luysberg, M. ;Reiche, M.Gösele, U.Proceedings paper2007, International Semiconductor Device Research Symposium - ISDRS, 12/12/2007Publication Microstructure evolution effects of helium redistribution in as-implanted silicon and Si0.8Ge0.2/Si heterostructures
;Morschbacher, M.J. ;da Silva, D.L. ;Fichtner, P.F.P. ;Oliviero, E. ;Behar, M.Zawislak, F.C.Journal article2004, Nuclear Instruments & Methods in Physics Research B, 219-220, p.703-707Publication Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si
Journal article2013, Microelectronic Engineering, 109, p.103-112Publication Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing
;Mantl, S. ;Holländer, B. ;Hüging, N. ;Luysberg, M. ;Lenk, St. ;Hogg, S.M. ;Herzog, H.-J.Hackbarth, T.Oral presentation2003, 12th EURO-CVD WorkshopPublication Strained Si on relaxed SiGe made by ion implantation and strain transfer
;Mantl, S. ;Buca, D. ;Holländer, B. ;Mörschbächer, M. ;Trinkhaus, H. ;Luysberg, M.Hueging, N.Proceedings paper2004-10, SiGE: Materials, Processing, and Devices, 3/10/2004, p.731-740Publication Strained Si-on-insulator for advanced CMOS devices
;Mantl, S. ;Buca, D. ;Zhao, Q.T. ;Hollander, B. ;Feste, S. ;Luysberg, M. ;Reiche, M.Gosele, U.Oral presentation2007, 4th Int. Workshop on Future Information Processing Technology - IWFIPTPublication The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
Proceedings paper2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.15-26Publication Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing
;Mantl, S. ;Holländer, B. ;Hüging, N. ;Luysberg, M. ;Lenk, S. ;Hogg, S.M. ;Herzog, H.J.Hackbarth, T.Meeting abstract2003, Abstracts Book ICSI3: 3rd International Conference on SiGe(C) Epitaxy and Heterostructures, 9/03/2003, p.117Publication Untersuchung der Anreicherung von Germanium in heliumimplantierten SiGe/Si-Heterostrukturen durch Oxidation
;Hueging, N. ;Luysberg, M. ;Buca, D. ;Hollander, B. ;Mantl, S.; ; Urban, K.Proceedings paper2005, Fr|hjahrstagung der Deutschen Physischen Gesellschaft, 4/03/2005Publication Untersuchung der Heliumimplantation als Schlüsselprozess in der Relaxtion von pseudomorphischen SiGe/Si Heterostrukturen
;Luysberg, M. ;Buca, D. ;Mantl, S. ;Morschbacher, M. ;Fichner, P.; ; Urban, K.Oral presentation2004, Frühjahrstagung der Deutschen Physischen Gesellschaft