Browsing by Author "Martino, J.A."
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Publication A study on the self-heating effect in deep submicrometer partially depleted SOI MOSFET at low temperature
Proceedings paper2003, Proceedings of the 18th Symposium on Microelectronics Technology and Devices - SBMICRO, 8/09/2003, p.112-119Publication An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
Journal article2012, Microelectronics Reliability, (52) 3, p.519-524Publication An analytical model for the non-linearity of triple gate SOI MOSFETs
Proceedings paper2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15, 1/05/2011, p.189-194Publication Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures
Proceedings paper2010, 9th International Workshop on Low Temperature Electronics - WOLTE, 21/06/2010, p.53-55Publication Analog operation of uniaxially and biaxially strained FD SOI nMOSFETs at cryogenic temperatures
Proceedings paper2008, EUROSOI Workshop Proceedings: 4th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits, 23/01/2008, p.77-78Publication Analog operation of uniaxially strained FD SOI nMOSFETs in cryogenic temperatures
Proceedings paper2007, IEEE International SOI Conference, 1/10/2007, p.45-46Publication Analog parameters of MuGFET devices with different source/drain engineering
Proceedings paper2012, 8th International Caribbean Conference on Devices, Circuts and Systems - ICCDCS, 14/03/2012Publication Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI
Proceedings paper2012, Proceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro, 30/08/2012, p.111-118Publication Analog performance of 60 MeV proton-irradiated SOI MuGFETs with different strain technologies
Proceedings paper2011, 7th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 17/01/2011, p.61-62Publication Analog performance of SOI FinFETs with different TiN gate electrode thickness
Proceedings paper2010, Microelectronics Technology and Devices - SBMICRO 2010, 6/09/2010, p.58-66Publication Analog performance of SOI MOSFETs with different TiN gate electrode thickness and hHigh-k dielectrics
Journal article2011, Journal of Integrated Circuits and Systems, (6) 2, p.102-106Publication Analog performance of standard and strained triple-gate nFINFETS
Journal article2008, Solid-State Electronics, (52) 12, p.1904-1909Publication Analysis of deep submicron bulk and fully depleted SOI nMOSFET analog operation at cryogenic temperatures
Proceedings paper2005, Silicon-on-Insulator Technology and Devices XII: Proceedings of the International Symposium, 15/05/2005, p.289-294Publication Analysis of standard and strained FinFET operation in source-follower buffer configuration
Proceedings paper2009, 5th EUROSOI Workshop, 19/01/2009, p.59-60Publication Analysis of temperature-induced saturation threshold voltage degradation in deep-submicron ultrathin SOI MOSFETs
Journal article2005, IEEE Trans. Electron Devices, (52) 10, p.2236-2242Publication Analysis of the interface trap density in SOI FinFETs with different TiN gate electrode thickness through charge pumping technique
Proceedings paper2009-09, 24th Symposium on Microelectronics Technology and Devices - SBMicro, 31/08/2009, p.559-565Publication Analysis of the linear kink effect in partially depleted SOI nMOSFETs
Proceedings paper2005, Proceedings SBMicro: 20th Symposium on Microelectronics Technology and Devices, 5/09/2005, p.512-519Publication Analysis of the silicon film thickness and the ground plane influence on ultra thin buried oxide SOI nMOSFETs
Proceedings paper2012, Proceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro, 30/08/2012, p.511-517Publication Analysis of the total resistance in standard and strained FinFET devices with and without the u se of SEG
Proceedings paper2009, 24th Symposium on Microelectronics Technology and Devices - SBMicro, 31/08/2009, p.575-582Publication Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Proceedings paper2017, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 3/04/2017, p.109-112