Browsing by Author "Moens, P."
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Publication A comprehensive model for hot carrier degradation in LDMOS transistors
Proceedings paper2007, Proceedings 45th Annual IEEE International Reliability Physics Symposium, 15/04/2007, p.492-497Publication A fast and flexible thermal simulation tool validated on smart power devices
Proceedings paper2005-05, Proceedings International Symposium on Power Semiconductor Devices - ISPSD, 23/05/2005, p.111-114Publication A new lateral-IGBT structure with a wider safe operating area
Journal article2007, IEEE Electron Device Letters, (28) 5, p.416-418Publication A new LIGBT structure to suppress substrate currents in a junction isolated technology
Journal article2005, Solid-State Electronics, (49) 3, p.363-367Publication A novel hot-hole injection degradation model for lateral nDMOS transistors
Proceedings paper2001, IEDM Technical Digest; December 2001; Washington, D.C., p.877-880Publication A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism
;Villaneuva, D. ;Moens, P. ;Krishnasamy, RajendranSchoenmaker, WimProceedings paper2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD; 5-7 September 2001; A, p.22-25Publication A physical-statistical approach to AlGaN/GaN HEMT reliability
;Moens, P.Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019Publication A unified hot carrier degradation model for integrated lateral and vertical nDMOS transistors
Proceedings paper2003, 15th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 14/04/2003, p.88-91Publication An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies
Proceedings paper2007-06, 19th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 27/05/2007, p.21-24Publication Analysis of a narrow-base laterel IGBT with double buried layer for junction-isolated smart-power technologies
Journal article2008, IEEE Transactions on Electron Devices, (55) 1, p.435-445Publication Breakdown and hot carrier injection in deep trench isolation structures
Journal article2005, Solid-State Electronics, (49) 8, p.1370-1375Publication Calibration during the TCAD development of a high voltage pDEMOS in a sub-μm CMOS technology
Oral presentation2000, CHIPPS; March 2000; Wandlitz, Germany.Publication Competing hot carrier degradation mechanisms in lateral n-type DMOS transistors
Proceedings paper2003, Proceedings 41st Annual IEEE International Reliability Physics Symposium, 30/03/2003, p.214-221Publication Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technology
Proceedings paper2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.291-294Publication Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization
Proceedings paper2019, 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 19/05/2019Publication Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Proceedings paper2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95Publication Effect of the n+-sinker in self-triggered bipolar ESD protection structures
Proceedings paper2002, Proceedings 24th EOS/ESD Symposium, 6/10/2002, p.274-280Publication ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping
;Canato, E ;Meneghini, M. ;Nardo, A. ;Masin, F. ;Barbato, F. ;Barbato, M.; Banerjee, A.Journal article2019, Microelectronics Reliability, 100, p.113334Publication Evidence for source-side injection hot carrier effects on lateral DMOS transistors
;Aresu, Stefano; ; ; ;Moens, P.Manca, JeanJournal article2004, Microelectronics Reliability, (44) 9_11, p.1621-1624Publication Evidence for source-side injection hot carrier effects on lateral DMOS transistors
Proceedings paper2004, Proceedings of the 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF, 4/10/2004, p.1621-1624