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Browsing by Author "Moens, P."

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    A comprehensive model for hot carrier degradation in LDMOS transistors

    Moens, P.
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    Mertens, Jan  
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    Bauwens, F.
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    Joris, P.
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    De Ceuninck, Ward  
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    Tack, M.
    Proceedings paper
    2007, Proceedings 45th Annual IEEE International Reliability Physics Symposium, 15/04/2007, p.492-497
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    A fast and flexible thermal simulation tool validated on smart power devices

    Desoete, B.
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    Moens, P.
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    Driessens, Evelien
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    Elattari, Brahim
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    Van den Bosch, Geert  
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    Gillon, R.
    Proceedings paper
    2005-05, Proceedings International Symposium on Power Semiconductor Devices - ISPSD, 23/05/2005, p.111-114
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    A new lateral-IGBT structure with a wider safe operating area

    Bakeroot, Benoit  
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    Doutreloigne, Jan  
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    Vanmeerbeek, P.
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    Moens, P.
    Journal article
    2007, IEEE Electron Device Letters, (28) 5, p.416-418
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    A new LIGBT structure to suppress substrate currents in a junction isolated technology

    Bakeroot, Benoit  
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    Doutreloigne, Jan  
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    Moens, P.
    Journal article
    2005, Solid-State Electronics, (49) 3, p.363-367
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    A novel hot-hole injection degradation model for lateral nDMOS transistors

    Moens, P.
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    Tack, Marnix
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    Degraeve, Robin  
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    Groeseneken, Guido  
    Proceedings paper
    2001, IEDM Technical Digest; December 2001; Washington, D.C., p.877-880
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    A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism

    Villaneuva, D.
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    Moens, P.
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    Krishnasamy, Rajendran
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    Schoenmaker, Wim
    Proceedings paper
    2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD; 5-7 September 2001; A, p.22-25
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    A physical-statistical approach to AlGaN/GaN HEMT reliability

    Moens, P.
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    Stockman, Arno  
    Proceedings paper
    2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019
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    A unified hot carrier degradation model for integrated lateral and vertical nDMOS transistors

    Moens, P.
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    Van den Bosch, Geert  
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    Groeseneken, Guido  
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    Bolognesi, D.
    Proceedings paper
    2003, 15th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 14/04/2003, p.88-91
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    An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies

    Bakeroot, Benoit  
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    Doutreloigne, Jan  
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    Vanmeerbeek, P.
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    Moens, P.
    Proceedings paper
    2007-06, 19th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 27/05/2007, p.21-24
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    Analysis of a narrow-base laterel IGBT with double buried layer for junction-isolated smart-power technologies

    Bakeroot, Benoit  
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    Doutreloigne, Jan  
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    Vanmeerbeek, P.
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    Moens, P.
    Journal article
    2008, IEEE Transactions on Electron Devices, (55) 1, p.435-445
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    Breakdown and hot carrier injection in deep trench isolation structures

    Elattari, Brahim
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    Coppens, P.
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    Van den Bosch, Geert  
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    Moens, P.
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    Groeseneken, Guido  
    Journal article
    2005, Solid-State Electronics, (49) 8, p.1370-1375
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    Calibration during the TCAD development of a high voltage pDEMOS in a sub-μm CMOS technology

    Vermandel, Miguel
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    Doutreloigne, Jan  
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    Moens, P.
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    Tack, Marnix
    Oral presentation
    2000, CHIPPS; March 2000; Wandlitz, Germany.
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    Competing hot carrier degradation mechanisms in lateral n-type DMOS transistors

    Moens, P.
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    Van den Bosch, Geert  
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    Groeseneken, Guido  
    Proceedings paper
    2003, Proceedings 41st Annual IEEE International Reliability Physics Symposium, 30/03/2003, p.214-221
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    Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technology

    Bakeroot, Benoit  
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    Vermandel, Miguel
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    Moens, P.
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    Doutreloigne, Jan  
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    Bolognesi, D.
    Proceedings paper
    2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.291-294
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    Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

    Moens, P.
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    Constant, A.
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    Stockman, Arno  
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    Franchi, J.
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    Allerstam, F.
    Proceedings paper
    2019, 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 19/05/2019
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    Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

    Tajalli, A.
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    Stockman, Arno  
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    Meneghini, M.
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    Mouhoubi, S.
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    Banerjee, A.
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    Gerardin, S.
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    Bagatin, M.
    Proceedings paper
    2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95
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    Effect of the n+-sinker in self-triggered bipolar ESD protection structures

    De Heyn, Vincent  
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    Mahadeva Iyer, Natarajan
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    Groeseneken, Guido  
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    Reynders, K.
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    Moens, P.
    Proceedings paper
    2002, Proceedings 24th EOS/ESD Symposium, 6/10/2002, p.274-280
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    ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

    Canato, E
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    Meneghini, M.
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    Nardo, A.
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    Masin, F.
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    Barbato, F.
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    Barbato, M.
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    Stockman, Arno  
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    Banerjee, A.
    Journal article
    2019, Microelectronics Reliability, 100, p.113334
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    Evidence for source-side injection hot carrier effects on lateral DMOS transistors

    Aresu, Stefano
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    De Ceuninck, Ward  
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    Van den Bosch, Geert  
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    Groeseneken, Guido  
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    Moens, P.
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    Manca, Jean
    Journal article
    2004, Microelectronics Reliability, (44) 9_11, p.1621-1624
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    Evidence for source-side injection hot carrier effects on lateral DMOS transistors

    Aresu, S.
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    De Ceuninck, Ward  
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    Van den Bosch, Geert  
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    Groeseneken, Guido  
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    Moens, P.
    ;
    Manca, Jean
    Proceedings paper
    2004, Proceedings of the 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF, 4/10/2004, p.1621-1624
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