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Browsing by Author "Paccagnella, A."

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    A statistical approach to microdose induced degradation in FinFET devices

    Griffoni, Alessio
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    Gerardin, S.
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    Roussel, Philippe  
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    Degraeve, Robin  
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    Meneghesso, G.
    Journal article
    2009, IEEE Transactions on Nuclear Science, (56) 6_1, p.3285-3292
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    Depassivation of latent plasma damage in nMOSFETs

    Cellere, G.
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    Pantisano, Luigi
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    Valentini, M. G.
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    Paccagnella, A.
    Journal article
    2001, IEEE Trans. on Device and Materials Reliability, (1) 3, p.144-149
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    Different nature of process-induced and stress-induced defects in thin SiO2 layers

    Cellere, G.
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    Valentini, M.G.
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    Pantisano, Luigi
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    Cheung, K.P.
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    Paccagnella, A.
    Journal article
    2003, IEEE Electron Device Letters, (24) 6, p.393-395
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    Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

    Tajalli, A.
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    Stockman, Arno  
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    Meneghini, M.
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    Mouhoubi, S.
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    Banerjee, A.
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    Gerardin, S.
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    Bagatin, M.
    Proceedings paper
    2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95
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    Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

    Griffoni, A.
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    Gerardin, S.
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    Cester, A.
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    Paccagnella, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2007, IEEE Trans. Nuclear Science, (54) 6, p.2257-2263
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    Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation

    Cester, A.
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    Gerardin, S.
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    Paccagnella, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2005, IEEE Trans. Nuclear Science, (52) 6 part 1, p.2252-2258
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    Heavy ion damage in ultra-thin gate oxide SOI MOSFETs

    Cester, A.
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    Garardin, S.
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    Paccagnella, A.
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    Simoen, Eddy  
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    Claeys, Cor
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    Candelori, A.
    Proceedings paper
    2005, 8th European Conference on Radiation and Its Effects on Components and Systems - RADECS, 19/09/2005
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    Hot carrier degradation on n-channel SiO2/HfSiO MOSFETs: Effects on the devices performance and lifetime

    Cimino, Salvatore
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    Pantisano, Luigi
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    Aoulaiche, Marc
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    Degraeve, Robin  
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    Kwak, Dong Hwa
    Proceedings paper
    2005, 43rd Annual IEEE International Reliability Physics Symposium Proceedings, 17/04/2005, p.275-279
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    Impact of radiation on the operation and reliability of deep submicron CMOS technologies

    Claeys, Cor
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    Put, Sofie
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    Griffoni, Alessio
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    Cester, A.
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    Gerardin, S.
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    Meneghesso, G.
    Proceedings paper
    2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.39-46
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    Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs

    Griffoni, Alessio
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    Gerardin, S.
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    Meneghesso, G.
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    Paccagnella, A.
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    Simoen, Eddy  
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    Put, Sofie
    Journal article
    2008, IEEE Transactions on Nuclear Science, (55) 6, p.3182-3188
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    Study of breakdown effects in silicon multiguard structures

    Da Rold, Martina
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    Bacchetta, N.
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    Bisello, D.
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    Paccagnella, A.
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    Dalla Betta, G. F.
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    Verzellesi, G.
    Journal article
    1999, IEEE Trans. Nuclear Science, (46) 4, Pt.3, p.1215-1223
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    The impact of plasma-charging damage on the RF performance of deep-submicron MOSFET

    Pantisano, Luigi
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    Cheung, K. P.
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    Roussel, Philippe  
    ;
    Paccagnella, A.
    Journal article
    2002, IEEE Electron Device Letters, (23) 6, p.309-311

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