Browsing by Author "Paccagnella, A."
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Publication A statistical approach to microdose induced degradation in FinFET devices
Journal article2009, IEEE Transactions on Nuclear Science, (56) 6_1, p.3285-3292Publication Depassivation of latent plasma damage in nMOSFETs
;Cellere, G. ;Pantisano, Luigi ;Valentini, M. G.Paccagnella, A.Journal article2001, IEEE Trans. on Device and Materials Reliability, (1) 3, p.144-149Publication Different nature of process-induced and stress-induced defects in thin SiO2 layers
;Cellere, G. ;Valentini, M.G. ;Pantisano, Luigi ;Cheung, K.P.Paccagnella, A.Journal article2003, IEEE Electron Device Letters, (24) 6, p.393-395Publication Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Proceedings paper2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95Publication Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques
Journal article2007, IEEE Trans. Nuclear Science, (54) 6, p.2257-2263Publication Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation
Journal article2005, IEEE Trans. Nuclear Science, (52) 6 part 1, p.2252-2258Publication Heavy ion damage in ultra-thin gate oxide SOI MOSFETs
Proceedings paper2005, 8th European Conference on Radiation and Its Effects on Components and Systems - RADECS, 19/09/2005Publication Hot carrier degradation on n-channel SiO2/HfSiO MOSFETs: Effects on the devices performance and lifetime
Proceedings paper2005, 43rd Annual IEEE International Reliability Physics Symposium Proceedings, 17/04/2005, p.275-279Publication Impact of radiation on the operation and reliability of deep submicron CMOS technologies
;Claeys, Cor ;Put, Sofie ;Griffoni, Alessio ;Cester, A. ;Gerardin, S.Meneghesso, G.Proceedings paper2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.39-46Publication Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs
Journal article2008, IEEE Transactions on Nuclear Science, (55) 6, p.3182-3188Publication Study of breakdown effects in silicon multiguard structures
;Da Rold, Martina ;Bacchetta, N. ;Bisello, D. ;Paccagnella, A. ;Dalla Betta, G. F.Verzellesi, G.Journal article1999, IEEE Trans. Nuclear Science, (46) 4, Pt.3, p.1215-1223Publication The impact of plasma-charging damage on the RF performance of deep-submicron MOSFET
Journal article2002, IEEE Electron Device Letters, (23) 6, p.309-311