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Browsing by Author "Pireaux, J.J."

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    Effective attenuation length of Al Ka-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films

    Vitchev, R.G.
    ;
    Defranoux, Chr
    ;
    Wolstenholme, J
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    Conard, Thierry  
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    Bender, Hugo  
    ;
    Pireaux, J.J.
    Journal article
    2005, Journal of Electron Spectroscopy and Related Phenomena, (149) 1_3, p.37-44
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    Interfacial chemistry at high-k oxide layers on pretreated silicon wafers: XPS and TOF-SIMS study

    Vitchev, R.
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    Conard, Thierry  
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    Bender, Hugo  
    ;
    Houssiau, L.
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    Pireaux, J.J.
    Oral presentation
    2004, 31st Conference on the Physics and Chemistry of Semiconductor Interfaces
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    Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

    Houssiau, L.
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    Vitchev, R.G.
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    Pireaux, J.J.
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    Conard, Thierry  
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    Bender, Hugo  
    ;
    Richard, Olivier  
    Proceedings paper
    2003, AVS 4th International Conference on Microelectronics and Interfaces - ICMI, 3/03/2003, p.36-38
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    Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

    Bender, Hugo  
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    Conard, Thierry  
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    Richard, Olivier  
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    Brijs, Bert
    ;
    Petry, Jasmine
    Proceedings paper
    2003, Analytical Techniques for Semiconductor Materials and Processes, 27/04/2003, p.223-232
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    Surface reactions on silanised tantalum pentoxide for biosensor realisation

    Laureyn, Wim
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    De Palma, Randy
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    Frederix, Filip
    ;
    Bonroy, Kristien
    ;
    Friedt, Jean-Michel
    Oral presentation
    2002, Workshop on New Trends in Applied Surface Science
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    X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

    Vitchev, R.G.
    ;
    Pireaux, J.J.
    ;
    Conard, Thierry  
    ;
    Bender, Hugo  
    ;
    Wolstenholme, J.
    ;
    Defranoux, C.
    Journal article
    2004, Applied Surface Science, (235) 1_2, p.21-25

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