Browsing by Author "Pourghaderi, Mohammad Ali"

A new method to calculate leakage current and its applications for sub-45nm MOSFETs

An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology

BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?

Carrier transport in nanoscale transistors

General 2D Schroedinger-Poisson solver with open boundary conditions for nanoscale CMOS transistors

Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates

Heterogeneous nano-electronic devices enabled by monolithic integration of IIIV, Ge, and Si to expand future CMOS functionality

III-V and germanium FinFET devices integrated on a 300mm Si platform

Impact of the channel thickness on the performance of the ultrathin InGaAs channel MOSFET devices

In0.53Ga0.47As diodes for band-to-band tunneling calibration: design, fabrication and characterization

In0.53Ga0.47As quantum-well MOSFET with source-drain regrowth for low power logic applications

InGaAs gate-all-around nanowire devices on 300mm substrates

Nonparabolicity and confinement effects of IIIV materials in novel transistors

Reliability challenges of high mobility channel technologies: SiGe, Ge and InGaAs

RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

Study of the junction depth effect on ballistic current using the subband decomposition method

Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53 Ga0.47As devices with Al2O3

Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation