Browsing by Author "Profijt, Harald"
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Publication Advanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning
Meeting abstract2014-11, Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, 13/11/2014Publication Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
; ; ; ; Proceedings paper2015, Ultraclean Processing of Semiconductor Surfaces XII, 21/09/2014, p.16-19Publication Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Proceedings paper2014-10, SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices, 5/10/2014, p.977-987Publication Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Meeting abstract2014-10, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6, 5/10/2014, p.1855Publication Fundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD epitaxy
Publication Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor
Publication HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth
Proceedings paper2014, Ultra Clean Processing of Semiconductor Surfaces XII, 21/09/2014, p.20-23Publication Low temperature pre-epi Treatment: critical parameters to control interface contamination
Meeting abstract2013, E-MRS Fall Meeting Symposium A: Alternative Semiconductor Integration in Si Microelectronics, 16/09/2013Publication Low-temperature pre-epitaxy surface cleaning of Si and SiGe
Meeting abstract2015-05, 9th International Conference on Silicon Epitaxy and Heterostructures - ICSI9, 17/05/2015, p.143-144Publication Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
Proceedings paper2016, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7, 2/10/2016, p.347-359Publication Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
Meeting abstract2016, PRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices, 2/10/2016, p.2003