Browsing by Author "Proost, Joris"
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Publication A new approach for the measurement of resistivity and cross-sectional area of an aluminium interconnect line: principle and applications
Proceedings paper1998, Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, 30/09/1997, p.197-204Publication A new scaling issue in the electrical behavior of damascene versus plasma-etched interconnects
Proceedings paper1998, Proceedings Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, 30/09/1997, p.535-541Publication A novel approach to the short stripe effect in electromigration: modeling and experiment
Oral presentation2000, Materials for Advanced Metallization Conference - MAM; February 28 - March 1, 2000; Stresa, Italy.Publication Al speed fill
Journal article1999, Materials Science in Semiconductor Processing, (2) 1, p.75-78Publication Chemical and electrical characterization of the interaction of BCl 3/Cl2 etching and CF4/H2O stripping plasmas with aluminum surfaces
Journal article1999, J. Electrochem. Soc., 11, p.4230-4235Publication Compensation effect during water desorption from siloxane-based spin-on dielectric thin films
Journal article2000, J. Vacuum Science and Technology B, (B18) 1, p.303-306Publication Control and impact of processing ambient during rapid thermal silicidation
Proceedings paper1998, Rapid and Contact Integrated Processing VII, 13/04/1998, p.297-306Publication Critical role of degassing for hot aluminum filling
Journal article1998, Journal of Vacuum Science and Technology B, (16) 4, p.2091-2098Publication Effect of Cu on Al interfacial mass transport in bamboo rie and damscene (AlCu)
Proceedings paper1999, Materials Reliability in Microelectronics IX; 5-9 April 1999; San Francisco, Ca, USA., p.91-96Publication Effect of deposition parameters on the stress gradient of CVD and PECVD poly-SiGe for MEMS applications
; Celis, Jean-PierreProceedings paper2004-01, Micromachining and Microfabrication Process Technology IX, 25/01/2004, p.8-18Publication Electromigration behaviour of 0.3 μm damascene vs. plasma-etched interconnects: a lifetime and drift analysis
Proceedings paper1998, Proceedings of the IEEE 1998 International Interconnect Technology Conference, 1/06/1998, p.110-112Publication Electromigration threshold in damascene versus plasma-etched interconnects
Journal article1998, Applied Physics Letters, (73) 19, p.2748-2750Publication Electromigration-induced drift in damascene and plasma-etched Al(Cu). I: Kinetics of Cu depletion in polycrystalline interconnects
Journal article2000, Journal of Applied Physics, (87) 1, p.86-98Publication Electromigration-induced drift in damascene and plasma-etched Al(Cu). II: Mass transport mechanisms in bamboo interconnects
Journal article2000, Journal of Applied Physics, (87) 1, p.99-109Publication Electromigration-induced drift in damascene vs. conventional interconnects: an intrinsic difference
Proceedings paper1998, Materials Reliability in Microelectronics VIII, 13/04/1998, p.89-94Publication Incubation, time-dependent drift and saturation during Al-Si-Cu electromigration: modelling and implications for design
Proceedings paper1998, Proceedings of the IEEE International Interconnect Technology Conference - IITC, 1/06/1998, p.27-29Publication Microtexture and electromigration-induced drift in electroplated damascene Cu
Journal article2000, Journal of Applied Physics, (87) 6, p.2792-2802Publication Modeling electromigration-induced stress evolution and drift kinetics with a stress-dependent diffusivity
Publication Morphology of corrosion pits in aluminum thin film metallization
Journal article1998, Journal of Solid State Electrochemistry, (2) 3, p.150-155