Browsing by Author "Rafi, J.M."

A DLTS study on plasma-hydrogenated n-type high-resistivity MCz silicon

Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs in accumulation mode operation

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation

Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation

Degradation of the electrical performance and floating body effects in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

Degradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation

Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs

Effective lifetime of minority carriers in silicon: the role of heat- and hydrogen plasma treatments

Effects of irradiation induced lattice defects on standard trench and fine pattern trench IGBT characteristics

Electrical and opical characterization of thin semiconductor layers for advanced ULSI devices

Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

Enhancement of "linear kink effect" in fully depleted SOI n-MOSFETs at liquid nitrogen temperature

Evaluation of surface passivation layers for bulk lifetime estimation of high resistivity silicon for radiation detectors