Browsing by Author "Rzepa, G."

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics

Benchmarking time-dependent variability of junctionless nanowire FETs

Characterization and modeling of charge trapping: From single defects to devices

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Efficient physical defect model applied to PBTI in high-k stacks

Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress

Mapping of CMOS FET degradation in bias space – Application to DRAM peripheral devices

On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects

Physical modeling of NBTI: from individual defects to devices

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

The "permanent" component of NBTI revisited: saturation, degradation-reversal, and annealing

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release

Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling