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Browsing by Author "Sangiorgi, E."

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    Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

    Millesimo, M.
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    Fiegna, C.
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    Bakeroot, Benoit  
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    Borga, Matteo  
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    Posthuma, Niels  
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    Decoutere, Stefaan  
    Proceedings paper
    2024, International Reliability Physics Symposium (IRPS), APR 14-18, 2024
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    Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

    Millesimo, M.
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    Bakeroot, Benoit  
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    Borga, Matteo  
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    Posthuma, Niels  
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    Decoutere, Stefaan  
    Proceedings paper
    2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022
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    P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

    Tallarico, A. N.
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    Millesimo, M.
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    Borga, Matteo  
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    Bakeroot, Benoit  
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    Posthuma, Niels  
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    Cosnier, T.
    Journal article
    2024, IEEE ELECTRON DEVICE LETTERS, (45) 9, p.1630-1633
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    Reduced self-heating by strained silicon substrate engineering

    O'Neill, Anthony
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    Agaiby, Rimoon
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    Olsen, Sarah
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    Yang, Y.
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    Hellstrom, P.-E.
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    Ostling, M.
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    Oehme, M.
    Journal article
    2008, Applied Surface Science, (254) 19, p.6182-6185
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    Reduced self-heating by strained silicon substrate engineering

    O'Neill, A.
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    Olsen, S.
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    Yang, Y.
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    Agaiby, R.
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    Hellstrom, P.E
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    Ostling, M.
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    Lyutovich, K.
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    Kasper, E.
    Meeting abstract
    2007, 3rd International Workshop on New Group IV Semiconductor Nanoelectronics, 8/11/2007
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    Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress

    Tallarico, Andrea N.
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    Stoffels, Steve  
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    Magnone, P.
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    Hu, Jie
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    Lenci, Silvia  
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    Marcon, Denis  
    Journal article
    2016, IEEE Transactions on Electron Devices, (63) 2, p.723-730
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    TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

    Tallarico, A. N.
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    Millesimo, M.
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    Bakeroot, Benoit  
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    Borga, Matteo  
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    Posthuma, Niels  
    Journal article
    2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 2, p.507-513
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    The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

    Millesimo, M.
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    Borga, Matteo  
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    Bakeroot, Benoit  
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    Posthuma, Niels  
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    Decoutere, Stefaan  
    Journal article
    2022, IEEE ELECTRON DEVICE LETTERS, (43) 11, p.1846-1849

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