Browsing by Author "Sawada, Ken"
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Publication A digital intensive circuit for low-frequency noise monitoring in 28nm CMOS
Proceedings paper2015, IEEE Asian Solid-State Circuit Conference - A-SSCC, 9/11/2015, p.1-4Publication A fully-integrated method for RTN parameter extraction
; ; ; ; ; Sawada, KenProceedings paper2017, Symposium on VLSI Technology, 5/06/2017, p.132-133Publication Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study
Proceedings paper2014, IEEE International Reliability Physics Symposium - IRPS, 1/06/2014, p.PI.2Publication Defect-based compact modeling for RTN and BTI variability
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.CR-7.1-CR-7.6Publication First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Meeting abstract2014, 226th Meeting of The Electrochemical Society, 5/10/2014, p.1646Publication First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Proceedings paper2014, High Purity and High Mobility Semiconductors 13, 5/10/2014, p.111-123Publication In-line monitoring test structure for Charge-Based Capacitance Measurement (CBCM) with a start-stop self-pulsing circuit
Proceedings paper2015, International Conference on Microelectronic Test Structures - ICMTS, 23/03/2015, p.145-149Publication Pitfalls when using the SEED methodology
Proceedings paper2012, International ESD Workshop - IEW, 14/05/2012, p.400-409