Browsing by Author "Schanovsky, F."
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Publication A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics
Publication Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy
Publication Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Publication Direct tunneling and gate current fluctuations
; Kosina, H.Proceedings paper2013, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 3/09/2013, p.17-20Publication Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
Publication Modeling the Operation of Charge Trap Flash Memory–Part I: The Importance of Carrier Energy Relaxation
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 1, p.547-553Publication Multiphonon processes as the origin of reliability issues
Proceedings paper2013, Semiconductors, Dielectrics, and Materials for Nanoelectronics II, 27/10/2013, p.31-47Publication NBTI in nanoscale MOSFETs – The ultimate modeling menchmark
Journal article2014, IEEE Transactions on Electron Devices, (61) 11, p.3586-3593Publication Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies
Publication Understanding correlated drain and gate current fluctuations
; Grasser, T.Proceedings paper2013, 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, 15/07/2013, p.51-56Publication Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling
Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021