Browsing by Author "Schanovsky, Franz"

3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Advanced modeling of oxide defects for random telegraph noise

Application of single pulse dynamics to model program anderase cycling-induced defects in the tunnel oxide of charge-trapping devices

Bistable defects as the cause for NBTI and RTN

Modeling the Operation of Charge Trap Flash Memory-Part II: Understanding the ISPP Curve With a Semianalytical Model

On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment

Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory

Recent advances in understanding the bias temperature instability

The paradigm shift in understanding the bias temperature instability: from reaction–diffusion to switching oxide traps

The Significance of Nonlinear Screening and the pH Interference Mechanism in Field-Effect Transistor Molecular Sensors

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability