Browsing by Author "Shimamoto, Yasuhiro"
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Publication Effects of interactions between HfO2 and poly-Si on MOSCAP and MESFET electrical behaviour
Proceedings paper2003, Extended Abstracts International Workshop on Gate Insulator - IWGI, 6/11/2003, p.62-63Publication Implementation of high-k gate dielectrics - a status update
Proceedings paper2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14Publication Mobility reduction due to remote charge scattering in Al2O3/SiO2 gate-stacked MISFETs
Proceedings paper2002, Extended Abstracts of the 2002 International Conference on Solid State Devices - SSDM, 17/09/2002, p.704-705Publication Scalability of MOCVD-deposited Hafnium oxide
; ; ; ; Proceedings paper2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.59-64Publication Scaling of Hf-based gate dielectrics - integration with polysilicon gates
; ; ; ; Meeting abstract2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 13/10/2003Publication Scaling of HF-based gate dielectrics - intgeration with polysilicon gates
Proceedings paper2004, Physics and Technology of High-k Gate Dielectrics II, 12/10/2003, p.267-275Publication Scaling of high-k dielectrics towards sub-1nm EOT
Proceedings paper2003, IEEE International Symposium on VLSI Technology, Systems, and Applications, 23/04/2003, p.251-254Publication The impact of sub monolayers of HfO2 on the device performance of high-k transistors
Proceedings paper2003-12, Technical Digest IEDM - International Electron Devices Meeting, 7/12/2003, p.87-88Publication The mechanism of mobility degradation in misfets with Al2O3 gate dielectric