Browsing by Author "Shimura, Yosuke"
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Publication Advanced germanium devices for optical interconnects
Oral presentation2018, EW-Heraeus Seminar on Quantum Networks - From Building Blocks to ApplicationsPublication Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Journal article2015, Thin Solid Films, 590, p.163-169Publication Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application
Proceedings paper2017, 30th Annual Conference of the IEEE Photonics Society - IPC, 1/10/2017, p.311-312Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Proceedings paper2010-10, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 10/10/2010, p.529-535Publication Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Journal article2014, Applied Physics Letters, (104) 20, p.202107Publication Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x
Proceedings paper2013-06, 8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.65-66Publication C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy
Meeting abstract2015-05, 9th International Conference on Silicon Epitaxy and Heterostructures - ICSI9, 17/05/2015, p.43-44Publication Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si
Journal article2018, Applied Physics Letters, (113) 16, p.161101Publication Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
; ; ; ; Proceedings paper2015, Ultraclean Processing of Semiconductor Surfaces XII, 21/09/2014, p.16-19Publication Composition and thickness dependence of GeSn growth by chemical vapor deposition
Publication Compressively strained epitaxial Ge layers for quantum computing applications
Journal article2024, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 174, p.Art. 108231Publication Crystallinity and composition of Sc1-x(-y)SixP(y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications
Journal article2024, JAPANESE JOURNAL OF APPLIED PHYSICS, (63) 2, p.Art. 02SP97Publication Current transients in reverse-biased p-GeSn/n-Ge diodes
Proceedings paper2015, International Conference on Silicon Epitaxy and Heterostructures - ICSI-9, 17/05/2015, p.111-112Publication Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Journal article2018-10, Applied Physics Letters, (113) 19, p.192103Publication Defects reduction and characterization of epitaxial Si:C/Si:C:P layers grown using cyclic deposition and etching technique
Meeting abstract2014, E-MRS Fall meeting Symposium J: Alternative Semiconductor Integration in Si Microelectronics, 15/09/2014, p.J38Publication Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn
Journal article2016-05, ACS Applied Materials & Interfaces, (8) 21, p.13181-13186Publication Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers
Journal article2016-03, ECS Journal of Solid State Science and Technology, (5) 5, p.Q140-Q143Publication Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(001) substrates
Publication Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
Proceedings paper2013, 8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.63-64Publication Electrical properties of extended defects in strain relaxed GeSn
Journal article2018, Applied Physics Letters, (113) 2, p.22102