Browsing by Author "Shimura, Yosuke"

300mm fabrication of silicon quantum dot spin qubits using 0.33NA EUV lithography

64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform

Advanced germanium devices for optical interconnects

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels

Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x

C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy

Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si

Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces

Composition and thickness dependence of GeSn growth by chemical vapor deposition

Compressively strained epitaxial Ge layers for quantum computing applications

Concatenated continuous driving of silicon qubit by amplitude and phase modulation

Crystallinity and composition of Sc1-x(-y)SixP(y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Current transients in reverse-biased p-GeSn/n-Ge diodes

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

Defects reduction and characterization of epitaxial Si:C/Si:C:P layers grown using cyclic deposition and etching technique

Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn

Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers