Browsing by Author "Shin, Changhwan"
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Publication Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 5, p.2568-2574Publication Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices
Proceedings paper2020, 2020 IEEE International Memory Workshop (IMW), 17/05/2020Publication Impact of interface layer on charge trapping in Si:HfO2 based FeF FT
; ; ; ; Publication Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
Journal article2021, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (21) 2, p.176-182Publication Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
Journal article2021, IEEE ELECTRON DEVICE LETTERS, (42) 9, p.1280-1283Publication Study on memory characteristics of fin-shaped feedback field effect transistor
Journal article2022, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (37) 6, p.065006