Browsing by Author "Takakura, K."
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Publication A model for the radiation degradation of polycrystalline silicon films
Oral presentation2002, RADECS WorkshopPublication A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures
Journal article2004, Nuclear Instruments & Methods in Physics Research B, 219-220, p.676-679Publication Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation
Journal article2005, Journal of Materials Science: Materials in Electronics, (16) 7, p.459-462Publication Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients
Journal article2008, Journal of Materials Science: Materials in Electronics, (19) 2, p.161-165Publication Carrier lifetime evaluation of electron irradiated SiGe/Si diode
;Idemoto, T. ;Ohyama, H. ;Takakura, K. ;Tsunoda, I. ;Yoneoka, M.Nakashima, T.Proceedings paper2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.154-155Publication Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon
;Takakura, K. ;Ohyama, H. ;Yoshida, T. ;Murakawa, H. ;Rafi, Joan Marc ;Job, R.Ulyashin, A.Journal article2003, Physica B, 340-342, p.1022-1025Publication Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
Journal article2009, Physica B: Condensed Matter, (404) 23_24, p.4671-4673Publication Damage coefficient in high-temperature particle- and gamma-irradiated silicon p-i-n diodes
Journal article2003, Applied Physics Letters, (82) 2, p.296-298Publication Degradation and their recovery behavior of irradiated GaAlAs LEDs
Proceedings paper2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.119-124Publication Degradation behaviors for high temperature irradiated NPN Si transistors
Proceedings paper2002, Proceedings of the 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 9/10/2002, p.89-92Publication Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs in accumulation mode operation
Proceedings paper2005, Proceedings of the International Conference on Electrical Engineering - ICEE, 10/07/2005Publication Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
Journal article2004, Microelectronics Reliability, (44) 9_11, p.1721-1726Publication Degradation of SiC-MESFETs by irradiation
;Ohyama, H. ;Takakura, K. ;Uemura, K. ;Shigaki, K. ;Kudou, T. ;Matsumoto, T. ;Arai, M.Kuboyama, S.Journal article2008, Journal of Materials Science: Materials in Electronics, (19) 2, p.175-178Publication Degradation of the electrical performance and floating body effects in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Oral presentation2005, 24th Electronic Materials Symposium - EMS-24Publication Degradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation
Proceedings paper2004, Proceedings 5th European Workshop on Radiation Effects on Components and Systems (RADECS), 22/09/2004, p.43-48Publication Device performance of 90nm nMOSFETs at liquid nitrogen temperature
;Takakura, K. ;Hayama, K. ;Ohyama, H.; ;Lee, Shih-Chung; Claeys, CorProceedings paper2004, Proceedings WOLTE-6 - 6th European Workshop on Low Temperature Electronics, 23/06/2004, p.239-243Publication Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Proceedings paper2005, 8th European Conference on Radiation and Its Effects on Components and Systems - RADECS, 19/09/2005Publication Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation
Journal article2007, Physica B: Condensed Matter, 401-402, p.469-472Publication Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2125-2128Publication Effect of electron irradiation on thermal donors in oxygen-doped high-resistivity FZ Si
;Takakura, K. ;Ohyama, H. ;Yoshida, T. ;Murakawa, H. ;Rafi, Joan Marc ;Job, R.Ulyashin, A.Proceedings paper2004, Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003, 21/09/2003, p.53-58