Browsing by Author "Takeoka, Shinji"
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Publication 1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
; ; ; ; Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.134-135Publication 6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.70-73Publication 8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.181-182Publication Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Proceedings paper2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.699-704Publication Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Journal article2011, Journal of the Electrochemical Society, (158) 1, p.H69-H74Publication Gate-last vs. gate-first technology for aggressively scaled EOT Logic/RF CMOS
Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.34-35Publication High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.249-252Publication High-mobility Si1-xGex-channel PFETs: layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.41-42Publication Implant-free SiGe qqantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel.
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.241-244Publication Layout scaling of Si1-xGex pFETs
Journal article2011, IEEE Transactions on Electron Devices, (58) 8, p.2544-2550Publication On the origin of mobility reduction in ultrathin EOT HK/MG CMOS devices: Impact from gate-stack and device architecture
Proceedings paper2011, International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology - IWDTF-11, 20/01/2011, p.1-4Publication Si1-xGex-channel PFETs: scalability, layout considerations and compatibility with other stress techniques
Proceedings paper2011, Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3, 1/05/2011, p.493-503Publication SiGe SEG growth for buried channel p-MOS devices
Proceedings paper2009-10, ULSI Process Integration 6, 4/10/2009, p.201-210Publication SiGe SEG growth for buried channels p-MOS devices
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2364