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Browsing by Author "Tuominen, Marko"

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    Alternative gate insulator materials for future generation MOSFETs

    Heyns, Marc  
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    Bender, Hugo  
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    Carter, Richard
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    Caymax, Matty  
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    Conard, Thierry  
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    De Gendt, Stefan  
    Oral presentation
    2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.
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    Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties

    Besling, Wim
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    Young, Edward
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    Conard, Thierry  
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    Zhao, Chao
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    Carter, Richard
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    Vandervorst, Wilfried  
    Journal article
    2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133
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    Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

    Nohira, Hiroshi
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    Tsai, Wilman
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    Besling, Wim
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    Young, Edward
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    Pétry, Jasmine
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    Conard, Thierry  
    Journal article
    2002, Journal of Non-Crystalline Solids, (303) 1, p.83-87
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    Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties

    Besling, Wim
    ;
    Young, Edward
    ;
    Conard, Thierry  
    ;
    Zhao, Chao
    ;
    Vandervorst, Wilfried  
    ;
    Caymax, Matty  
    Oral presentation
    2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
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    Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

    Nohira, Hiroshi
    ;
    Tsai, Wilman
    ;
    Besling, Wim
    ;
    Young, Edward
    ;
    Pétry, Jasmine
    ;
    Conard, Thierry  
    Oral presentation
    2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
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    Gate stack preparation with high-k materials in a cluster tool

    De Gendt, Stefan  
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    Heyns, Marc  
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    Conard, Thierry  
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    Nohira, Hiroshi
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    Richard, Olivier  
    Proceedings paper
    2001, Proceedings of the IEEE International Symposium on Semiconductor Manufacturing - ISSM, 8/10/2001, p.395-398
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    High k dielectric materials prepared by atomic layer CVD

    Heyns, Marc  
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    Bender, Hugo  
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    Carter, Richard
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    Caymax, Matty  
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    Conard, Thierry  
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    De Gendt, Stefan  
    Oral presentation
    2001, 12th INFOS Conference - Insulating Films on Semiconductors; June 2001; Udine, Italy.
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    Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition

    Cosnier, Vincent
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    Bender, Hugo  
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    Caymax, Matty  
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    Chen, Jian
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    Conard, Thierry  
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    Nohira, Hiroshi
    Proceedings paper
    2001, Extended Abstracts of the International Workshop on Gate Insulator - IWGI, 1/11/2001, p.226-229
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    Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

    Tsai, Wilman
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    Nohira, Hiroshi
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    Carter, Richard
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    Caymax, Matty  
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    Conard, Thierry  
    ;
    De Gendt, Stefan  
    Oral presentation
    2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on
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    Stabilization of amorphous structures in ALCVD high-k oxide layers

    Zhao, Chao
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    Richard, Olivier  
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    Bender, Hugo  
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    Young, Edward
    ;
    Carter, Richard
    ;
    Tsai, Wilman
    Oral presentation
    2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on
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    Trap-assisted tunneling in high permittivity gate dielectric stacks

    Houssa, Michel  
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    Tuominen, Marko
    ;
    Naili, Mohamed
    ;
    Afanas'ev, V.
    ;
    Stesmans, Andre  
    ;
    Haukka, S.
    Journal article
    2000, J. Appl. Physics, (87) 12, p.8615-8620

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