Browsing by Author "Van den Bosch, Geert"
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Publication 3D measurement of 3D NAND memory hole with CD-SEM and tilted FIB
Publication 3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory
Proceedings paper2019, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 4/09/2019Publication A comprehensive closed-form model for the quantized accumulation layer in MOS structures
Journal article1998, Solid-State Electronics, (42) 1, p.49-56Publication A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations
Journal article2011, IEEE Transactions on Electron Devices, (58) 9, p.3147-3155Publication A comprehensive variability study of doped HfO2 FeFET for memory applications
Proceedings paper2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.85-88Publication A fast and flexible thermal simulation tool validated on smart power devices
Proceedings paper2005-05, Proceedings International Symposium on Power Semiconductor Devices - ISPSD, 23/05/2005, p.111-114Publication A methodology for mechanical stress and wafer warpage minimization during 3D NAND fabrication
Journal article2022, MICROELECTRONIC ENGINEERING, (254) February, p.Art. 111660Publication A novel multilayer inter-gate dielectric enabling up To 18V program / erase window for planar NAND flash
Proceedings paper2013-05, 5th IEEE International Memory Workshop - IMW, 26/05/2013, p.68-71Publication A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash
Journal article2022, IEEE ELECTRON DEVICE LETTERS, (43) 12, p.2085-2088Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Proceedings paper2010, IEEE Semiconductor Interface Specialists Conference - SISC, 2/12/2010Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Journal article2011, Electrochemical and Solid-State Letters, (14) 7, p.271-273Publication A proper approach to characterize retention-after-cycling in 3D-Flash devices
Proceedings paper2013, International Conference on Microelectronics Test Structures - ICMTS, 25/03/2013, p.187-191Publication A unified hot carrier degradation model for integrated lateral and vertical nDMOS transistors
Proceedings paper2003, 15th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 14/04/2003, p.88-91Publication Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.219-222Publication An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory
Journal article2023, SOLID-STATE ELECTRONICS, (199) January, p.Art.: 108498Publication Analysing antenna ratio dependence of plasma charging damage with Weibull breakdown statistics
Proceedings paper2000, Proceedings of the 30th European Solid-State Device Research Conference - ESSDERC, 11/09/2000, p.528-531Publication Analysis and application of energy capability characterization methods in power MOSFETs
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.453-456Publication Analysis of performance/variability trade-off in Macaroni-type 3-D NAND Memory
Proceedings paper2014, IEEE 6th International Memory Workshop, 18/05/2014, p.123-126Publication Analysis of plasma induced gate oxide damage in multi-level metal processing
Proceedings paper1998, Proceedings 15th International VLSI Multilevel Interconnection Conference - VMIC, 16/06/1998, p.405-409Publication Anomalously weak antenna ratio dependence of plasma process-induced damage
Proceedings paper2000, Proceedings of the 5th International Symposium on Plasma Process-Induced Damage - P2ID, 23/05/2000, p.6-9