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Browsing by Author "Vermeire, Bert"

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    Breakdown and defect generation in ultra-thin gate oxide

    Depas, Michel
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    Vermeire, Bert
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    Heyns, Marc  
    Journal article
    1996, Journal of Applied Physics, (80) 1, p.382-386
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    Breakdown and instability of 3 nm Gate Oxide

    Depas, Michel
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    Vermeire, Bert
    ;
    Heyns, Marc  
    Meeting abstract
    1995, 26th IEEE Semiconductor Interface Specialists' Conference, 7/12/1995
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    Chemicals for the Chlorination of Gate Oxides

    Mac Geary, M. J.
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    Boeglin, H. J.
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    Lubbers, A.
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    Mertens, Paul  
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    Vermeire, Bert
    Proceedings paper
    1994, Vacuum and Semiconductor Processing Conference, 15/06/1994
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    Chlorine precursors for gate oxidation processes

    Mc Geary, M. J.
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    Mertens, Paul  
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    Vermeire, Bert
    ;
    Heyns, Marc  
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    Sprey, Hessel  
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    Lubbers, A.
    Proceedings paper
    1997, Environmental, Safety, and Health Issues in IC Production, 4/12/1996, p.115-125
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    Defect density of ultra-thin gate oxides grown by conventional oxidation processes

    Depas, Michel
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    Vermeire, Bert
    ;
    Mertens, Paul  
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    Schaekers, Marc  
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    Meuris, Marc  
    ;
    Heyns, Marc  
    Proceedings paper
    1994, Proceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 19/09/1994, p.319-323
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    Determination of tunnelling parameters in ultra-thin oxide poly-Si/SiO2/Si structures

    Depas, Michel
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    Vermeire, Bert
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    Mertens, Paul  
    ;
    Van Meirhaeghe, R. L.
    ;
    Heyns, Marc  
    Journal article
    1995, Solid-State Electronics, (38) 8, p.1465-1471
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    Effect of Cl in gate oxidation

    Mertens, Paul  
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    McGeary, M. J.
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    Schaekers, Marc  
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    Sprey, Hessel  
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    Vermeire, Bert
    ;
    Depas, Michel
    Proceedings paper
    1997, Science and Technology of Semiconductor Surface Preparation, 1/04/1997, p.89-100
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    Effect of Cl in gate oxidation

    Mertens, Paul  
    ;
    McGeary, M. J.
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    Schaekers, Marc  
    ;
    Sprey, Hessel  
    ;
    Vermeire, Bert
    ;
    Depas, Michel
    Proceedings paper
    1997, Materials Reliability in Microelectronics VII, 31/03/1997, p.149-160
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    Effect of different chlorine sources during gate oxidation

    Vermeire, Bert
    ;
    Mertens, Paul  
    ;
    Mac Geary, M. J.
    ;
    Kenis, Karine  
    ;
    Heyns, Marc  
    ;
    Schaekers, Marc  
    Proceedings paper
    1994, Proceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 19/09/1994, p.143-146
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    Environmentally-friendly chlorine during oxidation

    Mertens, Paul  
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    Vermeire, Bert
    ;
    McGeary, M. J.
    ;
    Meuris, Marc  
    ;
    Heyns, Marc  
    ;
    Depas, Michel
    ;
    Sees, J.
    Proceedings paper
    1995, Proceedings IES 41st Annual Technical Meeting, 30/04/1995, p.474-479
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    Evaluation of different chlorine sources for gate oxidation

    Mertens, Paul  
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    Vermeire, Bert
    ;
    Depas, Michel
    ;
    Schaekers, Marc  
    ;
    Heyns, Marc  
    Proceedings paper
    1995, 7th Annual Dielectrics and CVD Metallization Symposium, 6/02/1995, p.211-239
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    Growth kinetics and electrical characteristics of ultra-thin pyrogenetic silicon oxide

    Depas, Michel
    ;
    Vermeire, Bert
    ;
    Mertens, Paul  
    ;
    Heyns, Marc  
    Journal article
    1995, Microelectronic Engineering, (28) 1_4, p.125-128
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    Just-Clean- Enough technology for the 21st century

    Heyns, Marc  
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    Meuris, Marc  
    ;
    Mertens, Paul  
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    Hurd, Trace
    ;
    Schmidt, Harald
    ;
    Depas, Michel
    Oral presentation
    1995, SEMICON Europe
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    Microroughness of clean silicon surfaces and gate oxide breakdown

    Depas, Michel
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    Crossley, A.
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    Vermeire, Bert
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    Mertens, Paul  
    ;
    Sofield, C. J.
    ;
    Heyns, Marc  
    Meeting abstract
    1995, 26th IEEE Semiconductor Interface Specialists' Conference, 7/12/1995
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    Statistical analysis of gate oxide integrity test

    Mertens, Paul  
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    Vermeire, Bert
    ;
    Depas, Michel
    ;
    Meuris, Marc  
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    Heyns, Marc  
    ;
    Gräf, D.
    Proceedings paper
    1994, Proceedings of the Institute of Environmental Science: 40th Annual Technical Meeting, 01/05/1994, p.350
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    The relation between sodium and aluminum contamination and dielectric breakdown in MOS structures

    Vermeire, Bert
    ;
    Rotondaro, Antonio
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    Mertens, Paul  
    ;
    Verhaverbeke, Steven
    ;
    Heyns, Marc  
    Proceedings paper
    1994, Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 15/10/1993, p.58-64
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    Ultra-thin gate oxide yield and reliability

    Depas, Michel
    ;
    Vermeire, Bert
    ;
    Mertens, Paul  
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    Meuris, Marc  
    ;
    Heyns, Marc  
    Proceedings paper
    1994, Symposium on VLSI Technology, 09/06/1994, p.23-24
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    Wear-out of ultra-thin gate oxides during high-field electron tunnelling

    Depas, Michel
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    Vermeire, Bert
    ;
    Mertens, Paul  
    ;
    Meuris, Marc  
    ;
    Heyns, Marc  
    Journal article
    1995, Semiconductor Science and Technology, (10) 6, p.753-8

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