Browsing by Author "Vermeire, Bert"
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Publication Breakdown and defect generation in ultra-thin gate oxide
Journal article1996, Journal of Applied Physics, (80) 1, p.382-386Publication Breakdown and instability of 3 nm Gate Oxide
Meeting abstract1995, 26th IEEE Semiconductor Interface Specialists' Conference, 7/12/1995Publication Chemicals for the Chlorination of Gate Oxides
Proceedings paper1994, Vacuum and Semiconductor Processing Conference, 15/06/1994Publication Chlorine precursors for gate oxidation processes
Proceedings paper1997, Environmental, Safety, and Health Issues in IC Production, 4/12/1996, p.115-125Publication Defect density of ultra-thin gate oxides grown by conventional oxidation processes
Proceedings paper1994, Proceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 19/09/1994, p.319-323Publication Determination of tunnelling parameters in ultra-thin oxide poly-Si/SiO2/Si structures
Journal article1995, Solid-State Electronics, (38) 8, p.1465-1471Publication Effect of Cl in gate oxidation
Proceedings paper1997, Science and Technology of Semiconductor Surface Preparation, 1/04/1997, p.89-100Publication Effect of Cl in gate oxidation
Proceedings paper1997, Materials Reliability in Microelectronics VII, 31/03/1997, p.149-160Publication Effect of different chlorine sources during gate oxidation
Proceedings paper1994, Proceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 19/09/1994, p.143-146Publication Environmentally-friendly chlorine during oxidation
; ;Vermeire, Bert ;McGeary, M. J.; ; ;Depas, MichelSees, J.Proceedings paper1995, Proceedings IES 41st Annual Technical Meeting, 30/04/1995, p.474-479Publication Evaluation of different chlorine sources for gate oxidation
Proceedings paper1995, 7th Annual Dielectrics and CVD Metallization Symposium, 6/02/1995, p.211-239Publication Growth kinetics and electrical characteristics of ultra-thin pyrogenetic silicon oxide
Journal article1995, Microelectronic Engineering, (28) 1_4, p.125-128Publication Just-Clean- Enough technology for the 21st century
Oral presentation1995, SEMICON EuropePublication Microroughness of clean silicon surfaces and gate oxide breakdown
Meeting abstract1995, 26th IEEE Semiconductor Interface Specialists' Conference, 7/12/1995Publication Statistical analysis of gate oxide integrity test
Proceedings paper1994, Proceedings of the Institute of Environmental Science: 40th Annual Technical Meeting, 01/05/1994, p.350Publication The relation between sodium and aluminum contamination and dielectric breakdown in MOS structures
Proceedings paper1994, Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 15/10/1993, p.58-64Publication Ultra-thin gate oxide yield and reliability
Proceedings paper1994, Symposium on VLSI Technology, 09/06/1994, p.23-24Publication Wear-out of ultra-thin gate oxides during high-field electron tunnelling
Journal article1995, Semiconductor Science and Technology, (10) 6, p.753-8