Browsing by Author "Vrielinck, Henk"
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Publication Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy
Journal article2017, ECS Journal of Solid State Science and Technology, (6) 5, p.P284-P289Publication Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
Journal article2018, ECS Journal of Solid State Science and Technology, (7) 2, p.P24-P28Publication Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
Proceedings paper2017, Semiconductor Process Integration 10, 3/10/2017, p.181-190Publication Deep level transient spectroscopy (DLTS) study of P3HT:PCBM organic solar cells
Oral presentation2011, MRS Fall Meeting Symposium H: Organic Photovotlaics Devices and ProcessingPublication Deep-level transient spectroscopic study of quenched-in defects in germanium
Publication Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn
Journal article2016-05, ACS Applied Materials & Interfaces, (8) 21, p.13181-13186Publication Direct estimation of captive cross sections in the presence of low capture: application of the identifcation of quenched-in deep-level defects in Ge
Journal article2014, Semiconductor Science and Technology, (29) 12, p.125007Publication DLTS of Si and Ge nanodots embedded in SiO2
Meeting abstract2018, European MRS Spring Meeting Symposium I: Materials Research for Group IV Semiconductors: Growth, Characterization and ..., 18/06/2018, p.I.14.4Publication Electrical characterization of P3HT:PCM organic solar cells by temperature dependent admittance spectroscopy: defect investigation
Oral presentation2011, E-MRS Spring Meeting Symposium S: Organic Photovoltaics: Science and TechnologyPublication Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes
Journal article2011, Physica Status Solidi C, (8) 3, p.674-677Publication Electronic properties of manganese in germanium
Journal article2015, Journal of Physics D: Applied Physics, (48) 17, p.175101Publication Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS
Proceedings paper2013, Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5, 12/05/2013, p.251-258Publication Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
Journal article2018, Applied Physics Letters, (113) 23, p.232101Publication Impact of Ge doping on Si substrate and diode characteristics
Publication Mn related defect levels in germanium
Proceedings paper2014, 226th ECS Fall Meeting - High Purity and High Mobility Semiconductors Symposium, 5/10/2014, p.1658Publication Multifaceted Characterization Methodology for Understanding Nonidealities in Perovskite Solar Cells: A Passivation Case Study
Journal article2024, SOLAR RRL, (8) 21, p.Art. 2400529Publication Profiling of border traps at GeSn and high-K oxide interface
Meeting abstract2014, ECS 2014 Fall Meeting, Symposium P3: High Purity and High Mobility Semiconductors 13, 5/10/2014, p.1647Publication Profiling of border traps at GeSn and high-K oxide interface
Meeting abstract2014-10, Japanese Society for the Promotion of Sciences - JSPS, 5/10/2014, p.P3-1647Publication Study of electrically active defects in epitaxial layers on silicon
Proceedings paper2016, China Semiconductor Technology International Conference - CSTIC Symposium IV: Thin Film and Process Integration, 13/03/2016Publication Temperature-independent slow carrier emission from deep-level defects in p-type germanium
Journal article2013, Journal of Physics D: Applied Physics, (46) 42, p.425101