Browsing by Author "Waltl, M."

A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays

Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy

Characterization and modeling of charge trapping: From single defects to devices

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

COMPHY - A compact-physics framework for unified modeling of BTI

CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States

Efficient physical defect model applied to PBTI in high-k stacks

Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI

Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress

NBTI in nanoscale MOSFETs – The ultimate modeling menchmark

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors

The "permanent" component of NBTI revisited: saturation, degradation-reversal, and annealing

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release