Browsing by Author "Zhang, J.F."

A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias

AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction

Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

An assessment of the mobility degradation induced by remote charge scattering

Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Damaging species in the hole injection induced electron trap generation

Degradation of oxides and oxynitrides under hot hole stress

Different types of positive charges generated near the oxide/Si interface

Effects of detrapping on electron traps generated in gate oxides

Effects of measurement temperature on NBTI

Electron trap generation at different temperatures in the gate oxide

Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme

ESD characterization of planar InGaAs devices

Generation of hole traps in oxides under high field stresses

Generation of mobile hydrogenous ions in gate oxide and their potential applications

Hole trap generation in gate dielectric during substrate hole injection

Hole traps in silicon dioxides - Part I: Properties

Hole traps in silicon dioxides - Part II: Generation mechanism

Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides