Browsing by Author "Zhao, C.Z."

Analysis of the kinetics for interface state generation following hole injection

Hole trap generation in gate dielectric during substrate hole injection

Hole traps in silicon dioxides - Part I: Properties

Hole traps in silicon dioxides - Part II: Generation mechanism

Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides

Hydrogen induced positive charge generation in gate oxides

Hydrogen induced positive charge in Hf-based dielectrics

Impact of different defects on the kinetics of Negative Bias Temperature Instability of Hafnium stacks

Instability and defects in gate dielectric: similarity and differences between Hf-stacks and SiO2

Interface state generation after hole injection

On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

Process-induced positive charges in Hf-based gate stacks

Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks

Relation between hole traps and hydrogenous species in silicon dioxides

Stress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defect

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

Which defect breaks down gate oxides?