Browsing by Type "Meeting abstract"
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Publication 0-level packaging for (RF-)MEMS
Meeting abstract2003, IEEE European Systems Packaging Workshop: Workshop Programme and Abstracts, 20/01/2003Publication 1-D model of OSG low-k films modification by EUV/VUV emission
;Rakhimova, T.V. ;Rakhimov, A.T. ;Mankelevich, Y.A. ;Lopaev, D.V. ;Ziryanov, S.M.Kovalev, A.S.Meeting abstract2013, Plasma Etch and Strip in Microtechnology - PESM, 14/03/2013Publication 1-D model of RF CCP discharge in Ar/CF4/CF3I gas mixtures
;Proshina, Olga ;Rakhimova, TatyanaBaklanov, MikhaïlMeeting abstract2013, Plasma Etch and Strip in Microtechnology - PESM, 14/03/2013Publication 1/f low frequency fluctuations and inversion layer quantization in deep submicron metal-oxide-semiconductor field effect transistors
Meeting abstract2002, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 5/06/2002, p.CM1-12Publication 1/f noise in fully integrated electrolytically gated FinFETs with fin width down to 20nm
Meeting abstract2019, ICNF conference, 18/01/2019, p.66-68Publication 15nm HP patterning with EUV lithography and SADP
Meeting abstract2012, 34th International Symposium on Dry Process - DPS, 15/11/2012Publication 2-D simulations of various compact spot-size converters
;Luyssaert, BertMeeting abstract2002, PECS-IV: International Workshop on Photonic and Electromagnetic Crystal Structures, 28/10/2002, p.62Publication 2-D simulations of various compact spot-size converters
;Luyssaert, BertMeeting abstract2002, Workshop and EOS Topical Meeting on Two-Dimensional Photonic Crystals, 25/08/2002, p.I-09Publication 2-dimensional fiber-based optical interconnect between CMOS IC's
Meeting abstract2000, Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe, 15/09/2000, p.1 pp.Publication 200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application
Meeting abstract2019, 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 7/07/2019Publication 200mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
Meeting abstract2012-06, 6th International Silicon Technology and Device Meeting, 4/06/2012, p.106-107Publication 200mm Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by CVD
;Park, Si-Young ;Anisha, R. ;Berger, Paul; ;Nguyen, Duy ;Takeuchi, ShotaroMeeting abstract2009, Abstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6, 17/05/2009, p.72-73Publication 22% large-area front-junction screen-printed bifacial n-type Si solar cells
Meeting abstract2019, SNEC PV Power Expo, 2/06/2019Publication 25Gb/s Silicon-Photonics WDM Platform for Low-Power Optical I/O
Meeting abstract2013, 3rd International Symposium on Photonics and Electronics Convergence - Advanced Nanophotonics and Silicon Device Systems- ISPEC, 18/11/2013Publication 2D material integration in the semiconductor industry: Challenges and Solutions
Meeting abstract2019, Graphene week 2019, 23/09/2019Publication 2D MoS2 film thickness impact on the efficiency of surface-doped devices
Meeting abstract2017, 48th IEEE Semiconductor Interface Specialists Conference - SISC, 6/12/2017, p.2.5Publication 2D rotational invariant multi subband schroedinger-poisson solver to model nanowire transistors
Meeting abstract2010, 14th International Workshop on Computational Electronics - IWCE, 27/10/2010Publication 300 mm-wafer characterization of ruthenium area-selective deposition in nanoscale line-space and hole patterns
Meeting abstract2020, 20th International Conference on Atomic Layer Deposition, 2/04/2020, p.AS-TuP-14Publication 300mm wafer level CVD-Mn/iodine-CVD-Cu-based metallization study for advanced copper interconnections
Meeting abstract2016, Materials for Advanced Metallization Conference - MAM, 20/03/2016Publication 300mm wafer level WS2 p-MOS capacitor characterization, smulation, and analysis
Meeting abstract2020, 51st IEEE Semiconductor Interface Specialist Conference - SISC 2020, 16/12/2020, p.5.2