Browsing by author "Cuypers, Daniel"
Now showing items 1-20 of 24
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Amorphous gadolinium aluminate as a dielectric and sulfur for indium phosphide passivation
van Dorp, Dennis; Nyns, Laura; Cuypers, Daniel; Ivanov, Tsvetan; Brizzi, Simone; Tallarida, Massimo; Fleischmann, Claudia; Hönicke, Philipp; Müller, Matthias; Richard, Olivier; Schmeisser, Dieter; De Gendt, Stefan; Lin, Dennis; Adelmann, Christoph (2019) -
Cleaning aspects of novel materials after CMP
Vos, Rita; Wada, M.; Arnauts, Sophia; Takahashi, H.; Cuypers, Daniel; Struyf, Herbert; Mertens, Paul (2011) -
Cleaning of III-V materials: surface chemistry considerations
van Dorp, Dennis; Cuypers, Daniel; Arnauts, Sophia; Mertens, Paul; De Gendt, Stefan (2013) -
Etching of III-V materials determined by ICP-MS with sub-nanometer precision
Rip, Jens; Cuypers, Daniel; Arnauts, Sophia; Holsteyns, Frank; van Dorp, Dennis; De Gendt, Stefan (2014) -
In situ studies of Al2O3 ALD growth and self-cleaning on III-V surfaces by STM and XPS
Rodriguez, Leonard; De Clercq, Astrid; Tallarida, Massimo; Cuypers, Daniel; Locquet, Jean-Pierre; Van Elshocht, Sven; Adelmann, Christoph; Caymax, Matty (2012) -
In situ studies of Al2O3 ALD growth and self-cleaning on III-V surfaces by STM and XPS
Rodriguez, Leonard; De Clercq, Astrid; Tallarida, Massimo; Cuypers, Daniel; Locquet, Jean-Pierre; Van Elshocht, Sven; Adelmann, Christoph; Caymax, Matty (2012) -
In-situ studies of the chemistry of trimethyl-aluminum on III-V semiconductor surfaces
Adelmann, Christoph; Tallarida, Massimo; Cuypers, Daniel; Rodriguez, Leonard; Michling, Marcel; Friedrich, Daniel; De Clercq, Astrid; Delabie, Annelies; Conard, Thierry; Van Elshocht, Sven; Locquet, Jean-Pierre; Schmeisser, Dieter; Caymax, Matty (2012) -
Interface chemistry of Al2O3/III-V upon atomic layer deposition
Tallarida, Massimo; Adelmann, Christoph; Cuypers, Daniel; Rodriguez, Leonard; Lin, Dennis; Michling, Marcel; Friedrich, Daniel; De Clercq, Astrid; Delabie, Annelies; Van Elshocht, Sven; Locquet, Jean-Pierre; Caymax, Matty; Schmeisser, Dieter (2012) -
Metal-insulator transition in ALD VO2 ultrathin films and nanoparticles: morphological control
Peter, Antony; Martens, Koen; Rampelberg, Geert; Toeller, Michael; Ablett, James; Meersschaut, Johan; Cuypers, Daniel; Franquet, Alexis; Detavernier, Christophe; Reuff, Jean-Pascal; Schaekers, Marc; Van Elshocht, Sven; Jurczak, Gosia; Adelmann, Christoph; Radu, Iuliana (2015) -
Nanoscale etching and reoxidation of InAs
van Dorp, Dennis; Arnauts, Sophia; Cuypers, Daniel; Rip, Jens; Holsteyns, Frank; De Gendt, Stefan (2014) -
Nanoscale etching of III-V semiconductors in acidic H2O2 solutions
van Dorp, Dennis; Arnauts, Sophia; Cuypers, Daniel; Rip, Jens; Holsteyns, Frank; De Gendt, Stefan (2013) -
Nanoscale etching of In0.53Ga0.47As for advanced CMOS processing
van Dorp, Dennis; Arnauts, Sophia; Cuypers, Daniel; Rip, Jens; Holsteyns, Frank; De Gendt, Stefan; Kelly, John (2014) -
Sacrificial self-assembled monolayers for the passivation of GaAs (100) surfaces and interfaces
Cuypers, Daniel; Fleischmann, Claudia; van Dorp, Dennis; Brizzi, Simone; Tallarida, Massimo; Müller, Matthias; Hönicke, Philipp; Billen, Arne; Chintala, Ravi Chandra; Conard, Thierry; Schmeisser, Dieter; Vandervorst, Wilfried; Van Elshocht, Sven; Armini, Silvia; De Gendt, Stefan; Adelmann, Christoph (2016) -
Selective wet removal of the SiN contact etch stop layer prior to S/D contact formation
Pacco, Antoine; Holsteyns, Frank; Schaekers, Marc; Everaert, Jean-Luc; Dictus, Dries; Cuypers, Daniel (2018) -
Study of InP surfaces after wet chemical treatments
Cuypers, Daniel; van Dorp, Dennis; Tallarida, Massimo; Brizzi, Simone; Rodriguez, Leonard; Conard, Thierry; Arnauts, Sophia; Schmeisser, Dieter; Adelmann, Christoph; De Gendt, Stefan (2013) -
Study of InP surfaces after wet chemical treatments
Cuypers, Daniel; van Dorp, Dennis; Tallarida, Massimo; Brizzi, Simone; Conard, Thierry; Rodriguez, Leonard; Mees, Maarten; Arnauts, Sophia; Schmeisser, Dieter; Adelmann, Christoph; De Gendt, Stefan (2013) -
Study of InP surfaces after wet chemical treatments
Cuypers, Daniel; van Dorp, Dennis; Tallarida, Massimo; Brizzi, Simone; Conard, Thierry; Rodriguez, Leonard; Mees, Maarten; Arnauts, Sophia; Schmeisser, Dieter; Adelmann, Christoph; De Gendt, Stefan (2014) -
Study of the etching mechanism of heavily doped Si in HF
Valckx, Nick; Cuypers, Daniel; Vos, Rita; Philipsen, Harold; Rip, Jens; Doumen, Geert; Mertens, Paul; Heyns, Marc; De Gendt, Stefan (2010) -
Study of the etching mechanisme of heavily n type doped Si in HF solutions
Cuypers, Daniel (2010) -
Surface chemistry and interface formation during the atomic layer deposition of alumina from trimethyl aluminum and water on indium phosphide
Adelmann, Christoph; Cuypers, Daniel; Tallarida, Massimo; Rodriguez, Leonard; De Clercq, Astrid; Friedrich, Daniel; Conard, Thierry; Delabie, Annelies; Seo, Jin Won; Locquet, Jean-Pierre; De Gendt, Stefan; Schmeisser, Dieter; Van Elshocht, Sven; Caymax, Matty (2013)