Browsing by author "Besling, Wim"
Now showing items 1-13 of 13
-
Atomic layer deposition of barriers for interconnect
Besling, Wim; Satta, Alessandra; Schuhmacher, Jörg; Abell, Thomas; Sutcliffe, Victor; Martin Hoyas, Ana; Beyer, Gerald; Gravesteijn, Dirk; Maex, Karen (2002) -
Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Besling, Wim; Young, Edward; Conard, Thierry; Zhao, Chao; Carter, Richard; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Haukka, S. (2002) -
Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Nohira, Hiroshi; Tsai, Wilman; Besling, Wim; Young, Edward; Pétry, Jasmine; Conard, Thierry; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko (2002) -
Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Besling, Wim; Young, Edward; Conard, Thierry; Zhao, Chao; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Haukka, S. (2001) -
Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Nohira, Hiroshi; Tsai, Wilman; Besling, Wim; Young, Edward; Pétry, Jasmine; Conard, Thierry; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko (2001) -
Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects
Beyer, Gerald; Satta, Alessandra; Schuhmacher, Jörg; Maex, Karen; Besling, Wim; Kilpela, Olli; Sprey, Hessel; Tempel, Georg (2002) -
Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
Satta, Alessandra; Schuhmacher, Jörg; Whelan, Caroline; Vandervorst, Wilfried; Brongersma, Sywert; Beyer, Gerald; Maex, Karen; Vantomme, Andre; Viitanen, M.M.; Brongersma, H.H.; Besling, Wim (2002) -
In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
De Witte, Hilde; Passefort, Sophie; Besling, Wim; Maes, Jos; Eason, K.; Young, Edward; Heyns, Marc (2002) -
In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
De Witte, Hilde; Passefort, Sophie; Besling, Wim; Maes, Jan; Eason, K.; Young, Edward; Rittersma, Chris; Heyns, Marc (2003) -
Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Tsai, Wilman; Chen, Jian; Carter, Richard; Cartier, Eduard; Kluth, Jon; Richard, Olivier; Claes, Martine; Lin, Steven; Nohira, Hiroshi; Conard, Thierry; Caymax, Matty; Young, Edward; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Manabe, Yukiko; Maes, Jan; Rittersma, Chris; Besling, Wim; Roozeboom, F. (2002) -
Physical characterization of high-k gate stacks deposited on HF-last surfaces
Bender, Hugo; Conard, Thierry; Nohira, Hiroshi; Pétry, Jasmine; Richard, Olivier; Zhao, Chao; Brijs, Bert; Besling, Wim; Detavernier, C.; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Chen, Jian; Kluth, Jon; Tsai, Wilman; Maes, Jos (2001) -
Thermal stability and scalability of zr-aluminate-based high-k gate stacks
Chen, Jerry; Cartier, Eduard; Carter, Richard; Kauerauf, Thomas; Zhao, Chao; Pétry, Jasmine; Cosnier, Vincent; Xu, Zhen; Kerber, Andreas; Tsai, Wilman; Young, Edward; Kubicek, Stefan; Caymax, Matty; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Copel, M.; Besling, Wim; Bajolet, Philippe; Maes, Jan (2002) -
TOFSIMS as a monitor for thin film growth
Conard, Thierry; Vandervorst, Wilfried; Pétry, Jasmine; Zhao, Chao; Besling, Wim; Nohira, Hiroshi; Richard, Olivier (2001)