Browsing by author "Jiang, Sijia"
Now showing items 1-20 of 24
-
6.1 family: the next generation of III-V semiconductors for advanced CMOS applications: epitaxial growth and passivation challenges
Merckling, Clement; Alian, AliReza; Firrincieli, Andrea; Jiang, Sijia; Cantoro, Mirco; Dekoster, Johan; Caymax, Matty; Heyns, Marc (2012) -
Defect distribution in InP epitaxially grown in nano-trenches on off-axis Si substrates
Bender, Hugo; Richard, Olivier; Jiang, Sijia; Merckling, Clement; Loo, Roger; Caymax, Matty (2012) -
Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Pourtois, Geoffrey; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty (2014) -
Evolution of (001) and (111) facets for selective epitaxial growth inside Submicron trenches
Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014) -
First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Caymax, Matty; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Pourtois, Geoffrey (2014) -
First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty; Pourtois, Geoffrey (2014) -
Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments
Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014) -
Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers
Cantoro, Mirco; Merckling, Clement; Jiang, Sijia; Guo, Weiming; Waldron, Niamh; Bender, Hugo; Dekoster, Johan; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty; Heyns, Marc (2012) -
Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers
Cantoro, Mirco; Merckling, Clement; Jiang, Sijia; Guo, Weiming; Waldron, Niamh; Bender, Hugo; Moussa, Alain; Douhard, Bastien; Vandervorst, Wilfried; Heyns, Marc; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering
Merckling, Clement; Waldron, Niamh; Jiang, Sijia; Guo, Weiming; Collaert, Nadine; Caymax, Matty; Vancoille, Eric; Barla, Kathy; Thean, Aaron; Heyns, Marc; Vandervorst, Wilfried (2014-01) -
Influence of chemical treatments on selective epitaxial growth of InP in STI nano-trenches on Si (001) substrates
Jiang, Sijia; Merckling, Clement; Waldron, Niamh; Vandervorst, Wilfried; Caymax, Matty; Heyns, Marc (2012) -
Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate
Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Moussa, Alain; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014) -
Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates
Jiang, Sijia; Merckling, Clement; Moussa, Alain; Guo, Weiming; Waldron, Niamh; Collaert, Nadine; Barla, Kathy; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014) -
Monolithic integration of Ge and III-V compound semiconductors on 300mm Si for CMOS
Caymax, Matty; Loo, Roger; Merckling, Clement; Guo, Weiming; Jiang, Sijia; Heyns, Marc; Vandervorst, Wilfried (2014) -
Monolithic integration of III-V semiconductors by selective area growth on Si(001) substrate: epitaxy challenges & applications
Merckling, Clement; Jiang, Sijia; Liu, Ziyang; Waldron, Niamh; Boccardi, Guillaume; Rooyackers, Rita; Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Collaert, Nadine; Van Campenhout, Joris; Heyns, Marc; Van Thourhout, Dries; Vandervorst, Wilfried; Thean, Aaron (2015) -
N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
Nguyen, N.D.; Souriau, Laurent; Shimizu, Y.; Jiang, Sijia; Rosseel, Erik; Everaert, Jean-Luc; Moussa, Alain; Clarysse, Trudo; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty (2011) -
Nucleation behavior of III/V crystal selectively grown inside nano-trenches: the influence of trench width
Jiang, Sijia; Merckling, Clement; Moussa, Alain; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Collaert, Nadine; Barla, Kathy; Langer, Robert; Thean, Aaron; Seefeldt, Marc; Heyns, Marc (2015) -
Selective area growth of III/V compounds on Si substrates using metal-organic vapor phase epitaxy
Jiang, Sijia (2015-11) -
Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique
Merckling, Clement; Waldron, Niamh; Jiang, Sijia; Guo, Weiming; Richard, Olivier; Douhard, Bastien; Moussa, Alain; Vanhaeren, Danielle; Bender, Hugo; Collaert, Nadine; Heyns, Marc; Thean, Aaron; Caymax, Matty; Vandervorst, Wilfried (2013) -
Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devices
Merckling, Clement; Waldron, Niamh; Jiang, Sijia; Guo, Weiming; Ryan, Paul; Collaert, Nadine; Caymax, Matty; Barla, Kathy; Heyns, Marc; Thean, Aaron; Vandervorst, Wilfried (2014)