Browsing by author "Trojman, Lionel"
Now showing items 21-35 of 35
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Novel, effective and cost-efficient method of introducing fluorine into metal/Hf-based gate stack in MuGFET and planar SOI devices with significant BTI improvement
Shickova, Adelina; Collaert, Nadine; Zimmerman, Paul; Demand, Marc; Simoen, Eddy; Pourtois, Geoffrey; De Keersgieter, An; Trojman, Lionel; Ferain, Isabelle; Leys, Frederik; Boullart, Werner; Franquet, Alexis; Kaczer, Ben; Jurczak, Gosia; Maes, Herman; Groeseneken, Guido (2007) -
On the impact of defects close to the gate electrode on the low-frequency 1/f noise
Magnone, Paolo; Pantisano, Luigi; Crupi, Felice; Trojman, Lionel; Pace, Calogero; Giusi, Gino (2008-09) -
On the origin of mobility reduction in ultrathin EOT HK/MG CMOS devices: Impact from gate-stack and device architecture
Ragnarsson, Lars-Ake; Mitard, Jerome; Hong, Sug-Hun; Takeoka, Shinji; Tseng, Joshua; Wang, Wei-E; Yamaguchi, Shinpei; Trojman, Lionel; Kauerauf, Thomas; De Keersgieter, An; Schram, Tom; Rohr, Erika; Collaert, Nadine; Jurczak, Gosia; Bourdelle, Konstantin; Nguyen, B-Y; Absil, Philippe; Hoffmann, Thomas Y. (2011) -
On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics
Ragnarsson, Lars-Ake; Mitard, Jerome; Kauerauf, Thomas; De Keersgieter, An; Schram, Tom; Rohr, Erika; Collaert, Nadine; Jurczak, Gosia; Hong, Sug-Hun; Tseng, Joshua; Wang, Wei-E; Trojman, Lionel; Bourdelle, Konstantin; Nguyen, B-Y; Absil, Philippe; Hoffmann, Thomas Y. (2011) -
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
Acurio, Eliana; Trojman, Lionel; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan (2021) -
Origins and implications of increased channel hot carrier variability in nFinFETs
Kaczer, Ben; Franco, Jacopo; Cho, Moon Ju; Grasser, Tibor; Roussel, Philippe; Tyaginov, Stanislav; Bina, Markus; Wimmer, Y.; Procel, L. M.; Trojman, Lionel; Crupi, Felice; Pitner, Gregory; Putcha, Vamsi; Weckx, Pieter; Bury, Erik; Ji, Z.; De Keersgieter, An; Chiarella, Thomas; Horiguchi, Naoto; Groeseneken, Guido; Thean, Aaron (2015) -
Performance assessment of (110) p-FET high-k/MG: is it mobility or series resistance limited?
Trojman, Lionel; Pantisano, Luigi; Severi, Simone; San Andres Serrano, Enrique; Hoffmann, Thomas Y.; Ferain, Isabelle; De Gendt, Stefan; Heyns, Marc; Maes, Herman; Groeseneken, Guido (2007) -
Reduction of the anomalous VT behavior in MOSFETs with High-k/metal gate stacks
Ferain, Isabelle; Pantisano, Luigi; Kottantharayil, Anil; Petry, Jasmine; Trojman, Lionel; Collaert, Nadine; Jurczak, Gosia; De Meyer, Kristin (2007) -
Reliability assessment of AlGaN/GaN Schottky barrier diodes under ON-state stress
Acurio Mendez, Eliana; Trojman, Lionel; Crupi, Felice; Moposita,; De Jaeger, Brice; Decoutere, Stefaan (2020) -
Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
Acurio Mendez, Eliana; Crupi, Felice; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel (2018) -
Reliability in GaN-based devices for power applications
Acurio Mendez, Eliana; Trojman, Lionel; Crupi, Felice; Iucolano, Ferdinando; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan (2018) -
Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs
Franco, Jacopo; Kaczer, Ben; Mukhopadhyay, Subhadeep; Duhan, Pardeep; Weckx, Pieter; Roussel, Philippe; Chiarella, Thomas; Ragnarsson, Lars-Ake; Trojman, Lionel; Horiguchi, Naoto; Spessot, Alessio; Linten, Dimitri; Mocuta, Anda (2016) -
Trapping in 1nm EOT high-k / MG
Zahid, Mohammed; Pantisano, Luigi; Degraeve, Robin; Aoulaiche, Marc; Trojman, Lionel; Ferain, Isabelle; san andres, e; Shickova, Adelina; O'Connor, Robert; Groeseneken, Guido; Heyns, Marc; De Gendt, Stefan (2008) -
Understanding and importance of defects in advanced materials
Pantisano, Luigi; Trojman, Lionel; Aoulaiche, Marc; O'Connor, R.; Kaczer, Ben; Groeseneken, Guido (2009) -
Velocity and mobility investigation in 1nm-EOT HfSiON on Si-(110) and (100) – does the dielectric quality matter?
Trojman, Lionel; Pantisano, Luigi; Dehan, Morin; Ferain, Isabelle; Severi, Simone; Maes, Herman; Groeseneken, Guido (2009)