Browsing by author "Nafria, Montserrat"
Now showing items 1-15 of 15
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A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs
Wu, Qian; Bayerl, A.; Porti, Marc; Martin-Martinez, Javier; Lanza, Mario; Rodiguez, Rosanna; Velayudhan, Vikas; Nafria, Montserrat; Aymerich, Xavier; Gonzalez, Mireia B; Simoen, Eddy (2014) -
Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
Martin-Martinez, Javier; Diaz Fortuny, Javier; Saraza Canflanca, Pablo; Rodriguez, Rosana; Castro-Lopez, Rafael; Roca, Elisenda; Fernandez, Francisco V.; Nafria, Montserrat (2023) -
Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach
Wu, Qian; Porti, Marc; Bayerl, Albin; Martin-Martinez, Javier; Rodriguez, Rosana; Nafria, Montserrat; Aymerich, Xavier; Simoen, Eddy (2015) -
Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents
Martin-Martinez, Javier; Kaczer, Ben; Boix, J.; Ayala, N.; Rodriguez, Rosana; Nafria, Montserrat; Aymerich, X.; Zuber, Paul; Dierickx, Bart; Groeseneken, Guido (2009-02) -
Comparison of standard macroscopic and Conductive AFM leakage measurements on gate removed high-k capacitors
Polspoel, Wouter; Vandervorst, Wilfried; Aguilera, Lidia; Porti, Marc; Nafria, Montserrat; Aymerich, Xavier (2008) -
Emerging yield and reliability challenges in nanometer CMOS technologies
Gielen, Georges; De Wit, Pieter J.H.; Maricau, Elie; Loeckx, J.; Martin-Martinez, Jose; Kaczer, Ben; Groeseneken, Guido; Rodriguez, Rosanna; Nafria, Montserrat (2008) -
Experimental characterization of NBTI effect on pMOSFET and CMOS inverter
Fernandez, Raul; Kaczer, Ben; Gago, J.; Rodriguez, Rosana; Nafria, Montserrat (2009-02) -
Improved characterization of high-k degradation with vacuum C-AFM
Polspoel, Wouter; Vandervorst, Wilfried; Aguilera, Lidia; Porti, Marc; Nafria, Montserrat; Aymerich, Xavier (2008) -
Influence of vacuum environment in conductive AFM measurements on advanced MOS gate dielectrics
Aguilera, Lidia; Polspoel, Wouter; Vandervorst, Wilfried; Nafria, Montserrat; Aymerich, Xavier (2007) -
Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
Aguilera, Lidia; Polspoel, Wouter; Volodin, Alexander; Van Haesendonck, Chris; Porti, Marc; Vandervorst, Wilfried; Nafria, Montserrat; Aymerich, Xavier (2008) -
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors
Polspoel, Wouter; Vandervorst, Wilfried; Aguilera, Lidia; Porti, Marc; Nafria, Montserrat; Aymerich, Xavier (2008) -
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors
Bayerl, Albin; Lanza, Mario; Aguilera, Lidia; Porti, Marc; Nafria, Montserrat; Aymerich, Xavier; De Gendt, Stefan (2013) -
Nanoscale effects of annealing on the electrical characteristic of hafnium based devices measured in a vacuum environment
Aguilera, Lidia; Polspoel, Wouter; Porti, Marc; Vandervorst, Wilfried; Nafria, Montserrat; Aymerich, Xavier (2008) -
Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions
Saraza-Canflanca, Pablo; Rodriguez, Rosana; Martin-Martinez, Javier; Castro-Lopez, Rafael; Roca, Elisenda; V. Fernandez, Fancisco; Nafria, Montserrat; Diaz Fortuny, Javier (2021) -
Stochastic piecewise modeling of post-BD gate current oriented to circuit design
Martin-Martinez, Javier; Kaczer, Ben; Ayala, N; Rodriguez, Rosana; Nafria, Montserrat; Aymerich, X; Zuber, Paul; Dierickx, Bart (2008)