Browsing by author "Chang, Vincent"
Now showing items 1-10 of 10
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A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
Ragnarsson, Lars-Ake; Chang, Vincent; Yu, HongYu; Cho, Hag-Ju; Conard, Thierry; Yin, KaiMin; Delabie, Annelies; Swerts, Johan; Schram, Tom; De Gendt, Stefan; Biesemans, Serge (2007-06) -
Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Groeseneken, Guido (2008) -
Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Yu, HongYu; Groeseneken, Guido (2008) -
Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
Yu, HongYu; Singanamalla, Raghunath; Ragnarsson, Lars-Ake; Chang, Vincent; Cho, Hag-Ju; Mitsuhashi, Riichirou; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Chang, Shou-Zen; Yin, K.M.; Schram, Tom; Kubicek, Stefan; De Gendt, Stefan; Absil, Philippe; De Meyer, Kristin; Biesemans, Serge (2007) -
Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
Chang, Vincent; Ragnarsson, Lars-Ake; Yu, HongYu; Aoulaiche, Marc; Conard, Thierry; Yin, KaiMin; Schram, Tom; Maes, Jan Willem; De Gendt, Stefan; Biesemans, Serge (2007) -
Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal
Kubicek, Stefan; Schram, Tom; Paraschiv, Vasile; Vos, Rita; Demand, Marc; Adelmann, Christoph; Witters, Thomas; Nyns, Laura; Ragnarsson, Lars-Ake; Yu, HongYu; Veloso, Anabela; Singanamalla, Raghunath; Kauerauf, Thomas; Rohr, Erika; Brus, Stephan; Vrancken, Christa; Chang, Vincent; Mitsuhashi, Riichirou; Akheyar, Amal; Cho, Hag-Ju; Hooker, Jacob; O'Sullivan, Barry; Chiarella, Thomas; Kerner, Christoph; Delabie, Annelies; Van Elshocht, Sven; De Meyer, Kristin; De Gendt, Stefan; Absil, Philippe; Hoffmann, Thomas Y.; Biesemans, Serge (2007) -
Nitrogen profile and dielectric cap layer (Al2O3, Dy2O3, La2O3) engineering on Hf-silicate
Cho, Hag-Ju; Yu, HongYu; Ragnarsson, Lars-Ake; Chang, Vincent; Schram, Tom; O'Sullivan, Barry; Kubicek, Stefan; Mitsuhashi, Riichirou; Akheyar, Amal; Van Elshocht, Sven; Witters, Thomas; Delabie, Annelies; Adelmann, Christoph; Rohr, Erika; Singanamalla, Raghunath; Chang, Shou-Zen; Swerts, Johan; Lehnen, Peer; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
Oxygen-vacancy-induced Vt shift in La-containing devices
O'Sullivan, Barry; Mitsuhashi, Riichirou; Pourtois, Geoffrey; Chang, Vincent; Adelmann, Christoph; Schram, Tom; Ragnarsson, Lars-Ake; Van der Heyden, Nikolaas; Cho, Hag-Ju; Harada, Y.; Veloso, Anabela; O'Connor, Robert; Pantisano, Luigi; Yu, HongYu; Groeseneken, Guido; Absil, Philippe; Biesemans, Serge; Ikeda, Atsushi; Niwa, Masaaki (2007) -
Thermally-stable high effective work function TaCN and Ta2N films for pMOS metal gate applications
Adelmann, Christoph; Lehnen, Peer; Ragnarsson, Lars-Ake; Conard, Thierry; Franquet, Alexis; Chang, Vincent; Rohr, Erika; Meersschaut, Johan; Boissiere, Olivier; Lohe, Christoph; Schram, Tom; Van Elshocht, Sven; De Gendt, Stefan (2008)