Browsing by author "Naili, Mohamed"
Now showing items 1-14 of 14
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Alternative gate insulator materials for future generation MOSFETs
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Jos; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, R.; Wilhelm, Rudi; Young, Edward; Zhao, Chao (2001) -
Charge trapping in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Heyns, Marc; Stesmans, Andre (2001) -
Charge trapping in SiOx/ZrO2 gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Heyns, Marc; Stesmans, Andre (2000) -
Charge trapping in very thin high-permittivity gate dielectric layers
Houssa, Michel; Stesmans, Andre; Naili, Mohamed; Heyns, Marc (2000) -
Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks
Xu, Zhen; Houssa, Michel; Carter, Richard; Naili, Mohamed; De Gendt, Stefan; Heyns, Marc (2002) -
Effect of O-2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Zhao, Chao; Bender, Hugo; Heyns, Marc; Stesmans, Andre (2001) -
Electrical and physical characterization of high-k dielectric layers
Houssa, Michel; Naili, Mohamed; Afanas'ev, V. V.; Heyns, Marc; Stesmans, Andre (2001) -
Electrical properties of metal-insulator-semiconductor devices with high permittivity gate dielectric layers
Houssa, Michel; Degraeve, Robin; Heyns, Marc; Kaczer, Ben; Groeseneken, Guido; Naili, Mohamed; Mertens, Paul; Stesmans, Andre; Jeon, J. S.; Halliyal, A. (2000) -
High k dielectric materials prepared by atomic layer CVD
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Guido; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, Wilfried; Wilhelm, Rudi; Yang, E.; Zhao, Chao (2001) -
High temperature grazing incidence XRD study on in-situ crystallization in ultra-thin oxide films
Zhao, Chao; Roebben, G.; Young, Edward; Bender, Hugo; Houssa, Michel; Naili, Mohamed; De Gendt, Stefan (2000) -
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction
Zhao, Chao; Roebben, G.; Bender, Hugo; Young, Edward; Haukka, S.; Houssa, Michel; Naili, Mohamed; De Gendt, Stefan; Heyns, Marc; Van der Biest, O. (2001) -
Model for the charge trapping in high permittivity gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Heyns, Marc; Stesmans, Andre (2001) -
Surface cleaning issues in thin-oxide technology
Mertens, Paul; Bearda, Twan; Houssa, Michel; Loewenstein, Lee; Teerlinck, Ivo; De Gendt, Stefan; Vos, Rita; Kenis, Karine; Naili, Mohamed; Heyns, Marc (1999) -
Trap-assisted tunneling in high permittivity gate dielectric stacks
Houssa, Michel; Tuominen, Marko; Naili, Mohamed; Afanas'ev, V.; Stesmans, Andre; Haukka, S.; Heyns, Marc (2000)