Browsing by author "Hayama, K."
Now showing items 21-40 of 48
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Electrical properties of strained Si MOSFETs by high-fluence electron-irradiation
Takakura, K.; Aoki, Y.; Hayama, K.; Oyana, H.; Simoen, Eddy; Claeys, Cor (2007) -
Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
Rafi, J.M.; Simoen, Eddy; Mercha, Abdelkarim; Hayama, K.; Campabadal, F.; Ohyama, H.; Claeys, Cor (2007) -
Enhancement of "linear kink effect" in fully depleted SOI n-MOSFETs at liquid nitrogen temperature
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2004) -
Evaluation of the channel engineering impact on the analog performance of deep-submicron partially depleted SOI MOSFETs at low temperatures
Hayama, K.; Ohyama, H.; Takakura, K.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2004) -
Floating body/floating well effects in deep submicron MOSFETs at liquid nitrogen temperature
Simoen, Eddy; Hayama, K.; Takakura, K.; Mercha, Abdelkarim; Claeys, Cor; Ohyama, H. (2005) -
Gate induced floating body effects in TiN/SiON and TiN/HfO2 triple gate SOI FinFETs
Rafi, J.M.; Simoen, Eddy; Mercha, Abdelkarim; Collaert, Nadine; Hayama, K.; Campabadal, F.; Claeys, Cor (2007) -
High temperature electron irradiation effects in InGaAs photodiodes
Ohyama, H.; Takakura, K.; Hayama, K.; Hirao, T.; Onoda, S.; Simoen, Eddy; Claeys, Cor (2003) -
High temperature electron irradiation effects in InGaAs photodiodes
Ohyama, H.; Takakura, K.; Hayama, K.; Hirao, T.; Onoda, S.; Simoen, Eddy; Claeys, Cor (2004) -
Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor; Kokkoris, M. (2004) -
Influence of irradiation temperature on electron-irradiated STI Si diodes
Ohyama, H.; Hayama, K.; Takakura, K.; Miura, T.; Shigaki, K.; Jono, T.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2003) -
Irradiation temperature dependence of radiation damage in Si photodiodes
Ohyama, H.; Hayama, K.; Takakura, K.; Simoen, Eddy; Claeys, Cor; Uemura, J.; Kishikawa, T. (2002) -
Irradiation temperature dependence of radiation damage in STI diodes
Ohyama, H.; Hayama, K.; Takakura, K.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2002) -
Irradiation temperature dependence of radiation damage in STI Si diodes
Ohyama, H.; Hayama, K.; Takakura, K.; Miura,; Shigaki, K.; Jono, T.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2003) -
Linear kink effect induced drain current hysteresis in ultra thin gate oxide FD-SOI MOSFETs
Hayama, K.; Ohyama, H.; Rafi, Joan Marc; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2004) -
Physics of the floating body effects in FD-SOI n-MOSFETs at liquid nitrogen temperature
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, Joan Marc; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2004) -
Radiation damage in deep submicron MOSFETs by high-temperature electron irradiation
Hayama, K.; Ohyama, H.; Takakura, K.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2002) -
Radiation damage in proton-irradiated stained Si n-MOSFETs
Ohtani, T.; Hayama, K.; Takakura, K.; Kudou, T.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2007) -
Radiation damage in proton-irradiated strained Si n-MOSFETs
Hayama, K.; Takakura, K.; Ohtani, T.; Kudou, T.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2008) -
Radiation damage in shallow trench isolation diodes
Hayama, K.; Ohyama, H.; Miura, T.; Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Kobayashi, K. (2001) -
Radiation damage of Ge-on-Si devices
Ohyama, H.; Sakamoto, K.; Sukizaki, H.; Takakura, K.; Hayama, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Midorikawa, M.; Kuboyama, S.; De Jaeger, Brice; Simoen, Eddy; Claeys, Cor (2008)