Browsing by author "Hayama, K."
Now showing items 1-20 of 48
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Anomalous threshold voltage change by 2 MeV electron irradiation at 100°C in deep submicron metal-oxide-semiconductor field-effect transistors
Hayama, K.; Ohyama, H.; Simoen, Eddy; Rafi, Joan Marc; Mercha, Abdelkarim; Claeys, Cor (2004-04) -
Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2008) -
Damage coefficient in high-temperature particle- and gamma-irradiated silicon p-i-n diodes
Ohyama, H.; Takakura, K.; Hayama, K.; Kuboyama, S.; Deguchi, Y.; Matsuda, S.; Simoen, Eddy; Claeys, Cor (2003) -
Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs in accumulation mode operation
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
Hayama, K.; Takakura, K.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor; Rafi, J.M.; Kokkoris, M. (2004) -
Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
Rafi, J.M.; Boulord, C.; Hayama, K.; Ohyama, H.; Campabadal, F.; Pellegrini, G.; Lozano, M.; Simoen, Eddy; Claeys, Cor (2008) -
Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
Rafi, J.M.; Boulord, C.; Hayama, K.; Ohyama, H.; Campabadal, F.; Pellegrini, G.; Lozano, M.; Simoen, Eddy; Claeys, Cor (2009) -
Degradation of the electrical performance and floating body effects in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Matsuyama, K.; Hayama, K.; Takakura, K.; Yoneoka, M.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Degradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation
Hayama, K.; Rafi, J.M.; Takakura, K.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor; Kuboyama, S.; Oka, K.; Matsuda, S. (2004) -
Device performance of 90nm nMOSFETs at liquid nitrogen temperature
Takakura, K.; Hayama, K.; Ohyama, H.; Mercha, Abdelkarim; Lee, Shih-Chung; Simoen, Eddy; Claeys, Cor (2004) -
Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation
Hayama, K.; Takakura, K.; Ohyama, H.; Kuboyama, S.; Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor (2007) -
Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Hayama, K.; Takakura, K.; Yoneoka, M.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2007) -
Effect of high-temperature electron irradiation in deep submicron MOSFETs
Ohyama, H.; Hayama, K.; Takakura, K.; Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor (2003) -
Effect of high-temperature electron irradiation in deep submicron MOSFETs
Hayama, K.; Ohyama, H.; Takakura, K.; Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor (2004) -
Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Effect of irradiation temperature on radiation damage in electron-irradiated MOS FETs
Ohyama, H.; Hayama, K.; Takakura, K.; Jono, T.; Simoen, Eddy; Claeys, Cor (2003) -
Effects of high-temperature electron irradiation on submicron MOSFETs
Ohyama, H.; Hayama, K.; Takakura, K.; Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor (2002) -
Effects of irradiation temperature on radiation damage in electron-irradiated MOSFETs
Ohyama, H.; Hayama, K.; Takakura, K.; Simoen, Eddy; Claeys, Cor (2002)