Browsing by author "Afanas'ev, V. V."
Now showing items 1-20 of 20
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Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si
Afanas'ev, V. V.; Houssa, Michel; Stesmans, Andre; Heyns, Marc (2001) -
Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2
Afanas'ev, V. V.; Houssa, Michel; Stesmans, Andre; Heyns, Marc (2002) -
Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4
Izmailov, R. A.; O'Sullivan, Barry; Popovici, Mihaela Ioana; Afanas'ev, V. V. (2022) -
Defect generation in Si/Sio2/Zro2/Tin structures: the possible role of hydrogen
Houssa, Michel; Afanas'ev, V. V.; Stesmans, Andre; Heyns, Marc (2001) -
Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks and the dispersive transport model
Houssa, Michel; Afanas'ev, V. V.; Stesmans, Andre; Heyns, Marc (2001) -
Electrical and physical characterization of high-k dielectric layers
Houssa, Michel; Naili, Mohamed; Afanas'ev, V. V.; Heyns, Marc; Stesmans, Andre (2001) -
Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3 , and ZrO2 insulators
Afanas'ev, V. V.; Houssa, Michel; Stesmans, Andre; Heyns, Marc (2001) -
Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si
Stesmans, Andre; Afanas'ev, V. V.; Houssa, Michel (2001) -
Electron spin resonance observation of Si dangling bond type defects at the interface (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2
Stesmans, Andre; Afanas'ev, V. V.; Houssa, Michel (2001) -
Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
Izmailov, R. A.; O'Sullivan, Barry; Popovici, Mihaela Ioana; Afanas'ev, V. V. (2021) -
Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition
Chou, H. Y.; Badylevich, M.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A.; Meersschaut, Johan; Goux, Ludovic; Kittl, Jorge; Wouters, Dirk (2011-12) -
Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements
Afanas'ev, V. V.; Houssa, Michel; Stesmans, Andre; Adriaenssens, G. J.; Heyns, Marc (2001) -
Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures
Shlyakhov, I; Achra, Swati; Bosman, N.; Asselberghs, Inge; Huyghebaert, Cedric; Radu, Iuliana; Chai, J.; Yang, M.; Wang, S. J.; Bol, A.; Iakoubovskii, K.; Houssa, Michel; Stesmans, A.; Afanas'ev, V. V. (2021) -
Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding
Peng, Lan; Kim, Soon-Wook; Iacovo, Serena; De Vos, Joeri; Schoenaers, B.; Stesmans, A.; Afanas'ev, V. V.; Miller, Andy; Beyer, Gerald; Beyne, Eric (2020) -
Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures
Delie, G.; Shlyakhov, I.; Iakoubovskii, K.; Afanas'ev, V. V.; Achra, Swati (2021) -
Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks
Houssa, Michel; Afanas'ev, V. V.; Stesmans, Andre; Heyns, Marc (2001) -
Processing Stability of Monolayer WS2 on SiO2
Delie, G.; Chiappe, D.; Asselberghs, Inge; Huyghebaert, Cedric; Radu, Iuliana; Banerjee, Sreetama; Groven, Benjamin; Brems, Steven; Afanas'ev, V. V. (2021) -
Shallow electron traps in high-k insulating oxides
Izmailov, R. A.; O'Sullivan, Barry; Popovici, Mihaela Ioana; Kittl, J. A.; Afanas'ev, V. V. (2021) -
Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
Afanas'ev, V. V.; Chou, H.-Y.; Houssa, M.; Lamagna, L.; Lamperti, A.; Molle, A.; Vincent, Benjamin; Brammertz, Guy (2011) -
Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation
Houssa, Michel; Afanas'ev, V. V.; Stesmans, Andre; Heyns, Marc (2000)