Browsing by author "Jones, S. K."
Now showing items 1-11 of 11
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A simulation evaluation of 100 nm CMOS device performance
Jones, S. K.; Bazley, D. J.; Augendre, Emmanuel; Badenes, Gonçal; De Keersgieter, An; Skotnicki, T. (2001) -
Active area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOS
Bazley, D. J.; Jones, S. K.; Badenes, Gonçal (1998) -
An Advanced Calibration Method for Modelling Oxidation and Mechanical Stress in Sub-Micron CMOS Isolation Structures
Jones, S. K.; Poncet, A.; De Wolf, Ingrid; Ahmed, M.; Rothwell, W. J. (1994) -
Characterisation of mechanical stress in advanced PBL isolation
Jones, S. K.; Ahmed, M.; Rothwell, W. J.; De Wolf, Ingrid; Deferm, Ludo (1994) -
Characterisation of mechanical stresses of device isolation structures by micro-Raman spectroscopy and modelling
Jones, S. K.; Ahmed, M.; Bazley, D. J.; Beanland, R. J.; De Wolf, Ingrid; Hill, C.; Rothwell, W. J. (1999) -
Device modeling in the frame of project ADEQUAT
Rudan, M.; Vecchi, M. C.; Von Schwerin, Andreas; Schoenmaker, Wim; De Keersgieter, An; McCarthy, K.; Mathewson, A.; Klaassen, Dick; Otten, J. A. M.; Jones, S. K.; Metcalfe, J. G. (1996) -
Optimization of polysilicon encapsulated local oxidation of silicon
Badenes, Gonçal; Rooyackers, Rita; Jones, S. K.; Bazley, D.; Beanland, R.; De Wolf, Ingrid; Deferm, Ludo (1998) -
Optimization of polysilicon encapsulated LOCOS for 0.25 micron CMOS: correlation between cavity dimensions, mechanical stress, and gate oxide integrity
Badenes, Gonçal; Rooyackers, Rita; Jones, S. K.; Bazley, D.; Beanland, R.; De Wolf, Ingrid; Deferm, Ludo (1997) -
Simulation of 0.18 micron CMOS device performance
Jones, S. K.; Badenes, Gonçal (1998) -
Simulation of advanced-LOCOS capability for sub-0.25 micron CMOS isolation
Jones, S. K.; Bazley, D. J.; Beanland, R.; Badenes, Gonçal; Scaife, B. (1997) -
Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment
De Wolf, Ingrid; Maes, Herman; Jones, S. K. (1996)