Browsing by author "Paccagnella, Alessandro"
Now showing items 1-10 of 10
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An insight into the effects induced by heavy-ion strikes in
Griffoni, Alessio; Thijs, Steven; Chen, Shih-Hung; Tazzoli, Augusto; Cordoni, Martina; Colombo, Paolo; Paccagnella, Alessandro; Linten, Dimitri; Groeseneken, Guido (2011) -
Angular and strain dependence of heavy-ions induced degration in SOI FinFETs
Griffoni, Alessio; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Simoen, Eddy; Claeys, Cor (2010) -
Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, Ben; de Potter de ten Broeck, Muriel; Verbeeck, Rita; Nackaerts, Axel (2009) -
Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, Ben; de Potter de ten Broeck, Muriel; Verbeeck, Rita; Nackaerts, Axel (2008) -
Multi-gate devices for the 32-nm node and beyond: advantages and issues
Griffoni, Alessio; Simoen, Eddy; Collaert, Nadine; Claeys, Cor; Paccagnella, Alessandro; Meneghesso, Gaudenzio (2008) -
SiO2/HfO2 MOSFETs after X-rays irradiation: impact on MOSFET performance and interface degradation
Cimino, Salvatore; Pantisano, Luigi; Paccagnella, Alessandro; Giubilato, Pietro; Groeseneken, Guido (2004) -
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
Bonaldo, Stefano; Gorchichko, Mariia; Zhang, En Xia; Ma, Teng; Mattiazzo, Serena; Bagatin, Marta; Paccagnella, Alessandro; Gerardin, Simone; Schrimpf, Ronald D.; Reed, Robert A.; Linten, Dimitri; Mitard, Jerome; Fleetwood, Daniel M. (2022) -
Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
Bonaldo, Stefano; Zhang, En Xia; Zhao, Simeng; Putcha, Vamsi; Parvais, Bertrand; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M. (2020) -
Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack
Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M. (2019) -
Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack
Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M. (2020-01)