Browsing by author "Stockman, Arno"
Now showing items 1-13 of 13
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A physical-statistical approach to AlGaN/GaN HEMT reliability
Moens, P.; Stockman, Arno (2019) -
Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
Bakeroot, Benoit; Stockman, Arno; Posthuma, Niels; Stoffels, Steve; Decoutere, Stefaan (2018) -
Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3
Vanhaverbeke, Celine; Cauwe, Maarten; Stockman, Arno; Op de Beeck, Maaike; De Smet, Herbert (2019) -
Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization
Moens, P.; Constant, A.; Stockman, Arno; Franchi, J.; Allerstam, F. (2019) -
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Tajalli, A.; Stockman, Arno; Meneghini, M.; Mouhoubi, S.; Banerjee, A.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Zanoni, E.; Tack, M.; Bakeroot, Benoit; Moens, P.; Meneghesso, G. (2018) -
ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping
Canato, E; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, F.; Barbato, M.; Stockman, Arno; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G. (2019) -
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Stockman, Arno; Masin, Fabrizio; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Bakeroot, Benoit; Moens, Peter (2018) -
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
Tajalli, A.; Canato, E.; Nardo, A.; Meneghini, M.; Stockman, Arno; Moens, P.; Zanoni, E.; Meneghesso, G. (2019) -
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Stockman, Arno; Canato, E.; Tajalli, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Moens, P.; Bakeroot, Benoit (2018) -
Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors
Stockman, Arno (2020-10) -
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron
Stockman, Arno; Uren, Michael; Tajalli, Alaleh; Meneghini, Matteo; Bakeroot, Benoit; Moens, Peter (2017) -
Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
Stockman, Arno; Canato, Eleonora; Meneghini, Matteo; Meneghesso, Gaudenzio; Moens, Peter; Bakeroot, Benoit (2019) -
μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
Canato, E.; Masin, F.; Borga, M.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Stockman, Arno; Banerjee, A.; Moens, P. (2019)