Browsing by author "Zhang, Wei Dong"
Now showing items 1-12 of 12
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A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs
Ma, Jigang; Zhang, Wei Dong; Zhang, Jian Fu; Benbakhti, Brahim; Li, Zhigang; Mitard, Jerome; Arimura, Hiroaki (2016) -
A single pulse charge pumping technique for fast measurements of interface states
Lin, L.; Ji, Zhigang; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2011) -
An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel
Ji, Zhigang; Zhang, Xiong; Franco, Jacopo; Gao, Rui; Duan, Meng; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; Alian, AliReza; Linten, Dimitri; Zhou, Daisy; Collaert, Nadine; De Gendt, Stefan; Groeseneken, Guido (2015) -
Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging
Duan, Meng; Zhang, Jian Fu; Ji, Zhigang; Zhang, Wei Dong; Vigar, David; Asen, Asenov; Gerrer, Louis; Chandra, Vikas; Aitken, Rob; Kaczer, Ben (2016) -
Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, J. F.; Ji, Z.; Benbakhti, Brahim; Govoreanu, Bogdan; Simoen, Eddy; Goux, Ludovic; Belmonte, Attilio; Degraeve, Robin; Kar, Gouri Sankar; Jurczak, Gosia (2018) -
Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
Duan, Meng; Zhang, Jian Fu; Ji, Zhigang; Zhang, Wei Dong; Kaczer, Ben; Asenov, Asen (2017) -
NBTI-generated defects in nanoscaled devices: fast characterization methodology and modeling
Gao, Rui; Ji, Zhigang; Manut, Azrif B.; Zhang, Jian Fu; Franco, Jacopo; Hatta, Sharifah Wan Muhamad; Zhang, Wei Dong; Kaczer, Ben; Linten, Dimitri; Groeseneken, Guido (2017) -
New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation
Duan, Meng; Zhang, Jian F.; Li, Zhigang; Zhang, Wei Dong; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Groeseneken, Guido; Asenov, Asen (2013) -
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
Gao, Rui; Manut, Azrif B.; Ji, Zhigang; Ma, Jigang; Duan, Meng; Zhang, Jian Fu; Franco, Jacopo; Hatta, Sharifah Wan Muhamad; Zhang, Wei Dong; Kaczer, Ben; Vigar, David; Linten, Dimitri; Groeseneken, Guido (2017) -
TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, Jian Fu; Marsland, John; Govoreanu, Bogdan; Degraeve, Robin; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Trigger-when-charged: a technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd
Manut, Azrif; Gao, Rui; Zhang, Jian Fu; Ji, Zhigang; Mehedi, Mehzabeen; Zhang, Wei Dong; Vigar, David; Asenov, Asen; Kaczer, Ben (2019)