Browsing by author "Shimura, Yosuke"
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Advanced germanium devices for optical interconnects
Srinivasan, Ashwyn; Porret, Clément; Shimura, Yosuke; Vissers, Ewoud; Geiregat, Pieter; Loo, Roger; Pantouvaki, Marianna; Van Campenhout, Joris; Van Thourhout, Dries (2018) -
Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Gencarelli, Federica; Shimura, Yosuke; Kumar, Arul; Vincent, Benjamin; Moussa, Alain; Vanhaeren, Danielle; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Heyns, Marc (2015) -
Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application
Srinivasan, Ashwyn; Porret, Clément; Pantouvaki, Marianna; Shimura, Yosuke; Gieregat, Pieter; Loo, Roger; Van Campenhout, Joris; Van Thourhout, Dries (2017) -
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Sakai, A.; Zaima, Shigeaki (2010-10) -
Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Chou, H.-Y; Afanas'ev, Valeri; Houssa, Michel; Stesmans, Andre; Vincent, Benjamin; Gencarelli, Federica; Shimura, Yosuke; Merckling, Clement; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2014) -
Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x
Shimura, Yosuke; Wang, Wei; Nieddu, Thomas; Gencarelli, Federica; Vincent, Benjamin; Laha, Priya; Terryn, Herman; Stefanov, Stefan; Chiussi, Stefano; Van Campenhout, Joris; Nguyen, Ngoc Duy; Vantomme, Andre; Loo, Roger (2013-06) -
C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy
Dhayalan, Sathish Kumar; Nuytten, Thomas; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Vandervorst, Wilfried (2015-05) -
Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si
Srinivasan, Ashwyn; Porret, Clément; Pantouvaki, Marianna; Shimura, Yosuke; Geiregat, Pieter; Loo, Roger; Van Campenhout, Joris; Van Thourhout, Dries (2018) -
Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Wostyn, Kurt; Kenis, Karine; Shimura, Yosuke; Profijt, Harald; Maes, Jan; Douhard, Bastien; Vandervorst, Wilfried (2015) -
Composition and thickness dependence of GeSn growth by chemical vapor deposition
Wang, Wei; Shimura, Yosuke; Nieddu, Thomas; Gencarelli, Federica; Nguyen, Duy; Vandervorst, Wilfried; Loo, Roger (2013-06) -
Current transients in reverse-biased p-GeSn/n-Ge diodes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Shimura, Yosuke; Loo, Roger; Simoen, Eddy; Nguyen, Ngoc Duy (2015) -
Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Gupta, Somya; Shimura, Yosuke; Richard, Olivier; Douhard, Bastien; Simoen, Eddy; Bender, Hugo; Nakatsuka, Osama; Zaima, Shigeaki; Loo, Roger; Heyns, Marc (2018-10) -
Defects reduction and characterization of epitaxial Si:C/Si:C:P layers grown using cyclic deposition and etching technique
Dhayalan, Sathish Kumar; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Nuytten, Thomas; Douhard, Bastien; Vandervorst, Wilfried (2014) -
Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn
Gupta, Somya; Simoen, Eddy; Loo, Roger; Madia, Oreste; Lin, Dennis; Merckling, Clement; Shimura, Yosuke; Conard, Thierry; Lauwaert, Johan; Vrielinck, Henk; Heyns, Marc (2016-05) -
Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers
Shimura, Yosuke; Srinivasan, Ashwyn; Loo, Roger (2016-03) -
Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(001) substrates
Shinoda, Tatsuya; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Zaima, Shigeaki (2012) -
Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
Gupta, Somya; Simoen, Eddy; Asano, Takanori; Nakatsuka, Osamu; Gencarelli, Federica; Shimura, Yosuke; Moussa, Alain; Loo, Roger; Zaima, Shigeaki; Nguyen, Ngoc Duy; Heyns, Marc (2013) -
Electrical properties of extended defects in strain relaxed GeSn
Gupta, Somya; Simoen, Eddy; Loo, Roger; Shimura, Yosuke; Gencarelli, Federica; Wouters, Lennaert; Paredis, Kristof; Bender, Hugo; Vrielink, Henk; Heyns, Marc (2018) -
Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence
Shimura, Yosuke; Srinivasan, Ashwyn; Van Thourhout, Dries; Van Deun, Rik; Pantouvaki, Marianna; Van Campenhout, Joris; Loo, Roger (2016) -
Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures
Shimura, Yosuke; Srinivasan, Ashwyn; Van Thourhout, Dries; Van Deun, Rik; Pantouvaki, Marianna; Van Campenhout, Joris; Loo, Roger (2015)