Browsing by author "Czerwinski, A."
Now showing items 1-20 of 32
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Accurate extraction of the diffusion line current in silicon p-n junction diodes
Simoen, Eddy; Claeys, Cor; Czerwinski, A.; Katcki, J. (1998) -
Activation energy analysis as a tool for extraction and investigation of p-n junction leakage current components
Czerwinski, A.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2003) -
Analysis of the diffusion currrent in cobalt silicided n+p junctions
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Gaubas, Eugenijus; Czerwinski, A. (1998) -
Diode analysis of silicon substrate quality
Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Czerwinski, A. (1999) -
Diode assessment of material characteristics in internally gettered and non-gettered Czochralski silicon: problems, pitfalls and guidelines
Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Czerwinski, A.; Gaubas, Eugenijus (1998) -
Electrical characterisation of shallow cobalt-silicided junctions
Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Czerwinski, A.; Katcki, J.; Ratajczak, J.; Gaubas, Eugenijus (2000) -
Electrical characterization of shallow cobalt-silicided junctions
Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Czerwinski, A.; Katcki, J.; Ratajczak, J.; Gaubas, Eugenijus (2001) -
Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics
Claeys, C.; Simoen, Eddy; Poyai, Amporn; Czerwinski, A. (1999) -
Extraction of accurate lifetime and doping profiles in Si p-n junction diodes
Simoen, Eddy; Claeys, Cor; Czerwinski, A.; Tomaszewski, D.; Gibki, J.; Bakowski, A.; Katcki, J. (1997) -
Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions
Czerwinski, A.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Ohyama, H. (2003) -
Impact of fast neutron irradiation on the silicon p-n junction leakage and role of the diffusion reverse current
Czerwinski, A.; Katcki, J.; Ratajczak, J.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Ohyama, Hidenori (2001) -
Impact of fast-neutron irradiation on the silicon P-N junction leakage and role of the diffusion reverse current
Czerwinski, A.; Katcki, J.; Ratajczak, J.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Ohyama, Hidenori (2002) -
Impact of the generation width on the lifetime extraction in Cz silicon p-n junctions
Czerwinski, A.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (1999) -
Improved extraction of Si substrate parameters from combined I-V and C-V measurements on P-N junction diodes
Czerwinski, A.; Simoen, Eddy; Vanhellemont, Jan; Tomaszewski, D.; Gibki, J.; Bakowski, A. (1997) -
Improved extraction of the activation energy of the leakage current in silicon P-N junction diodes
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Czerwinski, A.; Gaubas, Eugenijus (2001) -
Local electric field in silicided shallow junctions
Czerwinski, A.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2004) -
Metoda dokladnego wyznaczania parametrow polprzewodnika w zastosowaniu do pomiarow czasu zycia nosnikow i koncentracji domieszek / A method of accurate semiconductor parameters determination used for carrier lifetime and dopant concentration measurements
Czerwinski, A.; Tomaszewski, D.; Gibki, J.; Bakowski, A.; Simoen, Eddy; Vanhellemont, Jan (1997) -
New method for accurate determination of the electric-field enhancement in junctions - theoretical model and application to STI diodes with high fields
Czerwinski, A.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2002) -
Optimised diode analysis of electrical silicon substrate properties
Czerwinski, A.; Tomaszewski, D.; Gibki, J.; Bakowski, A.; Klima, K.; Katcki, J.; Simoen, Eddy; Claeys, Cor (1997) -
Optimised diode assessment of the surface and bulk generation/recombination properties of silicon substrates
Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Czerwinski, A.; Katcki, J. (1998)