Browsing by imec author "a9b203c3300dfebb47a6b80299f4347163aea606"
Now showing items 41-60 of 137
-
Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS
Caymax, Matty; Merckling, Clement; Wang, Gang; Orzali, Tommaso; Guo, Weiming; Vandervorst, Wilfried; Dekoster, Johan; Waldron, Niamh; Thean, Aaron (2012) -
Evolution of (001) and (111) facets for selective epitaxial growth inside Submicron trenches
Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014) -
Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS
Lin, Dennis; Waldron, Niamh; Brammertz, Guy; Martens, Koen; Wang, Wei-E; Sioncke, Sonja; Delabie, Annelies; Bender, Hugo; Conard, Thierry; Tseng, W.H.; Lin, S.C.; Temst, K.; Vantomme, Andre; Mitard, Jerome; Caymax, Matty; Meuris, Marc; Heyns, Marc; Hoffmann, Thomas Y. (2010) -
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications
Zhao, S. E.; Putcha, Vamsi; Bury, Erik; Franco, Jacopo; Walke, Amey; Peralagu, Uthayasankaran; Zhao, Ming; Alian, AliReza; Kaczer, Ben; Waldron, Niamh; Linten, Dimitri; Parvais, Bertrand; Collaert, Nadine (2020) -
Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
Collaert, Nadine; Alian, AliReza; De Jaeger, Brice; Peralagu, Uthayasankaran; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Capogreco, Elena; Devriendt, Katia; Hopf, Toby; Kenis, Karine; Mannaert, Geert; Milenin, Alexey; Peter, Antony; Sebaai, Farid; Teugels, Lieve; van Dorp, Dennis; Wostyn, Kurt; Horiguchi, Naoto; Waldron, Niamh (2019-03) -
First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers
Vandooren, Anne; Franco, Jacopo; Wu, Zhicheng; Parvais, Bertrand; Li, Waikin; Walke, Amey; Peng, Lan; Deshpande, Paru; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Ritzenthaler, Romain; Mitard, Jerome; Ragnarsson, Lars-Ake; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Mocuta, Dan; Ryckaert, Julien; Collaert, Nadine (2018) -
First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology
Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Sibaja-Hernandez, Arturo; Walke, Amey; Yu, Hao; Deshpande, Paru; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2019-12) -
First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
First demonstration of vertically-stacked gate-all-around highly-strained germanium nanowire p-FETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018) -
First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Caymax, Matty; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Pourtois, Geoffrey (2014) -
First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty; Pourtois, Geoffrey (2014) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
Parvais, Bertrand; Alian, AliReza; Peralagu, Uthayasankaran; Rodriguez, Raul; Yadav, Sachin; Khaled, Ahmad; ElKashlan, Rana Y.; Putcha, Vamsi; Sibaja-Hernandez, Arturo; Zhao, Ming; Wambacq, Piet; Collaert, Nadine; Waldron, Niamh (2020) -
Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Zhao, Simeng; jiang, Rong; Wang, Pang; Zhang, En Xia; Waldron, Niamh; Kunert, Bernadette; Mitard, Jerome; Collaert, Nadine; Soncke, Sonja; Linten, Dimitri; Schrimpf, Ronald; Reed, Robert; Fleetwood, Daniel (2018-09) -
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
Agopian, P. G. D.; Carmo, G. J.; Martino, J. A.; Simoen, Eddy; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2021) -
Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015) -
Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts
Vincent, Benjamin; Firrincieli, Andrea; Waldron, Niamh; Wang, W.-E.; Franquet, Alexis; Douhard, Bastien; Bender, Hugo; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty (2011) -
Ge chemical vapor deposition on GaAs for low resistivity contacts
Vincent, Benjamin; Firrincieli, Andrea; Wang, Wei-E; Waldron, Niamh; Franquet, Alexis; Douhard, Bastien; Vandervorst, Wilfried; Clarysse, Trudo; Brammertz, Guy; Loo, Roger; Dekoster, Johan; Meuris, Marc; Caymax, Matty (2011) -
Ge- and III/V-CMP for integration of high mobility channel materials
Ong, Patrick; Witters, Liesbeth; Waldron, Niamh; Leunissen, Peter (2011) -
Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments
Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014)