Browsing by author "Jech, Markus"
Now showing items 1-17 of 17
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A Compact Physics Analytical Model for Hot-Carrier Degradation
Tyaginov, Stanislav; Grill, Alexander; Vandemaele, Michiel; Grasser, Tibor; Hellings, Geert; Makarov, Alexander; Jech, Markus; Linten, Dimitri; Kaczer, Ben (2020) -
Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces
Jech, Markus; El-Sayed, Al-Moatasem; Tyaginov, Stanislav; Shluger, Alexander L; Grasser, Tibor (2019) -
Analysis of the features of hot-carrier degradation in FinFETs
Makarov, Alexander; Tyaginov, Stanislav; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018-10) -
Border trap based modeling of SiC transistor transfer characteristics
Tyaginov, Stanislav; Jech, Markus; Rzepa, Gerhard; Grill, Alexander; El-Sayed, Al-Moatasem; Pobegen, Gregor; Makarov, Alexander; Grasser, Tibor (2018) -
Enhancing the quality of low temperature SiO2 by atomic hydrogen exposure for excellent NBTI reliability
Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, Al-Moatasem; Jech, Markus; Waldhoer, Dominic; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, Valeri; Stesmans, Andre; Horiguchi, Naoto; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2020) -
First–principles parameter–free modeling of n– and p–FET hot–carrier degradation
Jech, Markus; Tyaginov, Stanislav; Kaczer, Ben; Franco, Jacopo; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2019) -
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory
Jech, Markus; Ulmann, Bianka; Rzepa, Gerhard; Tyaginov, Stanislav; Grill, Alexander; Waltl, Michael; Jabs, Dominic; Jungemann, Christoph; Grasser, Tibor (2019) -
Impact of the device geometric parameters on hot-carrier degradation in FinFETs
Tyaginov, Stanislav; Makarov, Alexander; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018) -
Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
Jech, Markus; Rott, Gunnar; Reisinger, Hans; Tyaginov, Stanislav; Rzepa, Gerhard; Grill, Alexander; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2020) -
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael; Tyaginov, Stanislav (2020) -
Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
Tyaginov, Stanislav; Makarov, Alexander; Jech, Markus; Vexler, Mikhail; Franco, Jacopo; Kaczer, Ben; Grasser, Tibor (2018-02) -
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
Jech, Markus; El-Sayed, Al-Moatasem; Tyaginov, Stanislav; Waldhoer, Dominic; Bouakline, Foudhil; Saalfrank, Peter; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2021-01) -
Stochastic modeling of hot-carrier degradation in nFinFETs considering the impact of random traps and random dopants
Makarov, Alexander; Kaczer, Ben; Roussel, Philippe; Vaisman Chasin, Adrian; Vandemaele, Michiel; Hellings, Geert; El-Sayed, Al-Moatasem; Jech, Markus; Grasser, Tibor; Linten, Dimitri; Tyaginov, Stanislav (2019) -
Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1-xO2
El-Sayed, Al-Moatasem; Jech, Markus; Waldhoer, Dominic; Makarov, Alexander; Vexler, Mikhail, I; Tyaginov, Stanislav (2022) -
TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Tyaginov, Stanislav; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael (2022-04-19) -
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors
Tyaginov, Stanislav; Makarov, Alexander; El-Sayed, Al-Moatasem Bellah; Vaisman Chasin, Adrian; Bury, Erik; Jech, Markus; Vandemaele, Michiel; Grill, Alexander; De Keersgieter, An; Vexler, Mikhail; Eneman, Geert; Kaczer, Ben (2022) -
Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs
Tyaginov, Stanislav; El-Sayed, Al-Moatasem; Makarov, Alexander; Vaisman Chasin, Adrian; Arimura, Hiroaki; Vandemaele, Michiel; Jech, Markus; Capogreco, Elena; Witters, Liesbeth; Grill, Alexander; De Keersgieter, An; Eneman, Geert; Linten, Dimitri; Kaczer, Ben (2019)