Browsing by author "Rzepa, Gerhard"
Now showing items 21-30 of 30
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On the impact of the gate metal work-function on the charge trapping component of BTI
Franco, Jacopo; Wu, Zhicheng; Rzepa, Gerhard; Ragnarsson, Lars-Ake; Dekkers, Harold; Vandooren, Anne; Groeseneken, Guido; Horiguchi, Naoto; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2018-10) -
On the impact of the gate work-function metal on the charge trapping component of NBTI and PBTI
Franco, Jacopo; Wu, Zhicheng; Rzepa, Gerhard; Ragnarsson, Lars-Ake; Dekkers, Harold; Vandooren, Anne; Groeseneken, Guido; Horiguchi, Naoto; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2019) -
Physical modeling of bias temperature instabilities in SiC MOSFETs
Schleich, Christian; Berens, Judith; Rzepa, Gerhard; Pobegen, Gregor; Rescher, Gerald; Tyaginov, Stanislav; Grasser, Tibor; Waltl, Michael (2019) -
Reliability in stacked Gate-All-Around Si nanowire devices: time dependent variability and full degradation mapping
Vaisman Chasin, Adrian; Bury, Erik; Franco, Jacopo; Kaczer, Ben; Rzepa, Gerhard; Putcha, Vamsi; Weckx, Pieter; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, Naoto; Linten, Dimitri (2018) -
Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
Waltl, Michael; Stampfer, Bernhard; Rzepa, Gerhard; Kaczer, Ben; Grasser, Tibor (2020) -
Superior NBTI in high-k SiGe transistors - Part I: experimental
Waltl, Michael; Grill, A.; Rzepa, Gerhard; Goes, Wolfgang; Franco, Jacopo; Kaczer, Ben; Witters, Liesbeth; Mitard, Jerome; Horiguchi, Naoto; Grasser, Tibor (2017) -
Superior NBTI in high-k SiGe transistors - Part II: theory
Waltl, Michael; Rzepa, Gerhard; Grill, A.; Goes, Wolfgang; Franco, Jacopo; Kaczer, Ben; Witters, Liesbeth; Mitard, Jerome; Horiguchi, Naoto; Grasser, Tibor (2017) -
TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Tyaginov, Stanislav; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael (2022-04-19) -
The defect-centric perspective of device and circuit reliability – From gate oxide defects to circuits
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Simicic, Marko; Putcha, Vamsi; Bury, Erik; Cho, Moon Ju; Degraeve, Robin; Linten, Dimitri; Groeseneken, Guido; Debacker, Peter; Parvais, Bertrand; Raghavan, Praveen; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Goes, Wolfgang; Grasser, Tibor (2016) -
The defect-centric perspective of device and circuit reliability – from individual defects to circuits
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Bury, Erik; Cho, Moon Ju; Degraeve, Robin; Linten, Dimitri; Groeseneken, Guido; Kukner, Halil; Raghavan, Praveen; Catthoor, Francky; Rzepa, Gerhard; Goes, Wolfgang; Grasser, Tibor (2015)