Browsing by author "Batuk, Dmitry"

Now showing items 1-19 of 19

    • 12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices 

      Kim, Min-Soo; Harada, N.; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Huynh Bao, Trong; Matagne, Philippe; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Jourdan, Nicolas; Sepulveda Marquez, Alfonso; Puliyalil, Harinarayanan; Jamieson, Geraldine; van der Veen, Marleen; Teugels, Lieve; El-Mekki, Zaid; Altamirano Sanchez, Efrain; Li, Y.; Nakamura, H.; Mocuta, Dan; Matsuoka, F. (2019)

    • Crystal structure and magnetic properties of the Cr-doped spiral antiferromagnet BiMnFe2O6 

      Batuk, Dmitry; De Dobbelaere, Christopher; Tsirlin, Alexander A.; Abakumov, Artem M.; Hardy, An; Van Bael, Marlies; Greenblatt, Martha; Hadermann, Joke (2013)

    • Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control 

      Subhechha, Subhali; Rassoul, Nouredine; Belmonte, Attilio; Hody, Hubert; Dekkers, Harold; van Setten, Michiel; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Banerjee, Kaustuv; Puliyalil, Harinarayanan; Kundu, Souvik; Pak, Murat; Tsvetanova, Diana; Bazzazian, Nina; Vandersmissen, Kevin; Batuk, Dmitry; Geypen, Jef; Heijlen, Jeroen; Delhougne, Romain; Kar, Gouri Sankar (2022)

    • Enabling 3-level High Aspect Ratio Supervias for 3nm nodes and below 

      Montero Alvarez, Daniel; Vega Gonzalez, Victor; Feurprier, Yannick; Varela Pedreira, Olalla; Oikawa, Noriaki; Martinez Alanis, Gerardo Tadeo; Batuk, Dmitry; Puliyalil, Harinarayanan; Versluijs, Janko; De Coster, Hanne; Bazzazian, Nina; Jourdan, Nicolas; Kumar, Kaushik; Lazzarino, Frederic; Murdoch, Gayle; Park, Seongho; Tokei, Zsolt (2022-06-29)

    • Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes 

      Tomomi, Takayama; Taishi, Ebisudani; Eiichiro, Shiba; Sepulveda Marquez, Alfonso; Blanquart, Timothee; Kimura, Yosuke; Subramanian, Sujith; Baudot, Sylvain; Briggs, Basoene; Gupta, Anshul; Veloso, Anabela; Capogreco, Elena; Mertens, Hans; Meersschaut, Johan; Conard, Thierry; Dara, Praveen; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Batuk, Dmitry; Demuynck, Steven; Morin, Pierre (2021)

    • EUV photoresist reference metrology using TEM tomography 

      Biedrzycki, Mark; Adiga, Umesh; Barnum, Andrew; Moussa, Alain; Arjavac, Jason; Haynes, Rose Marie; Charley, Anne-Laure; Leray, Philippe; Batuk, Dmitry (2020)

    • FEOL patterning challenges in scaled SRAM with vertical Surrounding Gate Transistors (SGT) 

      Tao, Zheng; Li, Waikin; Kim, Min-Soo; Devriendt, Katia; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Sepulveda Marquez, Alfonso; Jourdan, Nicolas; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Matagne, Philippe; Ragnarsson, Lars-Ake; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Altamirano Sanchez, Efrain; Lee, James; Li, YiSuo; Kanazawa, Kenichi; Harada, Nozomu; Masuoka, Fujio (2019)

    • Fin bending in dimensional scaling 

      Zhang, Liping; Hellin, David; Sepulveda Marquez, Alfonso; Altamirano Sanchez, Efrain; Lazzarino, Frederic; Morin, Pierre; Wang, Shouhua; Hopf, Toby; Kenis, Karine; Lorant, Christophe; Sebaai, Farid; Batuk, Dmitry; Briggs, Basoene; Mertens, Hans; Demuynck, Steven (2020)

    • First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers 

      Subramanian, Sujith; Hosseini, Maryam; Chiarella, Thomas; Sarkar, Satadru; Schuddinck, Pieter; Chan, BT; Radisic, Dunja; Mannaert, Geert; Hikavyy, Andriy; Rosseel, Erik; Sebaai, Farid; Peter, Antony; Hopf, Toby; Morin, Pierre; Wang, Shouhua; Devriendt, Katia; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Veloso, Anabela; Dentoni Litta, Eugenio; Baudot, Sylvain; Siew, Yong Kong; Zhou, X.; Briggs, Basoene; Capogreco, Elena; Hung, Joey; Koret, R.; Spessot, Alessio; Ryckaert, Julien; Demuynck, Steven; Horiguchi, Naoto; Boemmels, Juergen (2020)

    • Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P Space 

      Mertens, Hans; Ritzenthaler, Romain; Oniki, Yusuke; Briggs, Basoene; Chan, BT; Hikavyy, Andriy; Hopf, Toby; Mannaert, Geert; Tao, Zheng; Sebaai, Farid; Peter, Antony; Vandersmissen, Kevin; Dupuy, Emmanuel; Rosseel, Erik; Batuk, Dmitry; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Abigail, Daniel_; Grieten, Eva; D'have, Koen; Mitard, Jerome; Subramanian, Sujith; Ragnarsson, Lars-Ake; Weckx, Pieter; Chehab, Bilal; Hellings, Geert; Ryckaert, Julien; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021)

    • Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures 

      Mertens, Hans; Ritzenthaler, Romain; Oniki, Yusuke; Puttarame Gowda, Pallavi; Mannaert, Geert; Sebaai, Farid; Hikavyy, Andriy; Rosseel, Erik; Dupuy, Emmanuel; Peter, Antony; Vandersmissen, Kevin; Radisic, Dunja; Briggs, Basoene; Batuk, Dmitry; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Seidel, Felix; Richard, Olivier; Chan, BT; Mitard, Jerome; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022)

    • Low temperature source / drain epitaxy and functional silicides: essentials for ultimate contact scaling 

      Porret, Clément; Everaert, Jean-Luc; Schaekers, Marc; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Rosseel, Erik; Rengo, Gianluca; Loo, Roger; Khazaka, R.; Givens, M.; Piao, Xiaoyu; Mertens, Sofie; Heylen, Nancy; Mertens, Hans; Toledo de Carvalho Cavalcante, Camila; Sterckx, Gunther; Brus, Stephan; Nalin Mehta, Ankit; Korytov, Maxim; Batuk, Dmitry; Favia, Paola; Langer, Robert; Pourtois, Geoffrey; Swerts, Johan; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022)

    • Middle-of-line plasma dry etch challenges for Buried Power Rail integration 

      Radisic, Dunja; Veloso, Anabela; Gupta, Anshul; Hosseini, Maryam; Wang, Shiwei; Mertens, Hans; Chan, BT; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Lazzarino, Frederic; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022)

    • New bending mode in SAQP Si fins and its mitigation 

      Sepulveda Marquez, Alfonso; Hellin, David; Zhang, Liping; Kenis, Karine; Batuk, Dmitry; Baudot, Sylvain; Briggs, Basoene; Mountsier, Tom; Barla, Kathy; Morin, Pierre; Altamirano Sanchez, Efrain (2022)

    • Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations 

      Vega Gonzalez, Victor; Montero Alvarez, Daniel; Versluijs, Janko; Varela Pedreira, Olalla; Jourdan, Nicolas; Puliyalil, Harinarayanan; Chehab, Bilal; Peissker, Tobias; Haider, Ali; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Le, Quoc Toan; Bazzazian, Nina; Heylen, Nancy; van der Veen, Marleen; El-Mekki, Zaid; Webers, Tomas; Vats, H.; Rynders, Luc; Cupak, Miroslav; Lee, Jae Uk; Drissi, Youssef; Halipre, Luc; Gillijns, Werner; Charley, Anne-Laure; Verdonck, Patrick; Witters, Thomas; Van Gompel, Sander; Kimura, Yosuke; Ciofi, Ivan; De Wachter, Bart; Swerts, Johan; Grieten, Eva; Ercken, Monique; Kim, Ryan Ryoung han; Croes, Kristof; Leray, Philippe; Jaysankar, Manoj; Nagesh, Nishanth; Ramakers, Leon; Murdoch, Gayle; Park, Seongho; Tokei, Zsolt; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021)

    • Ru as an alternative material for advanced contacts 

      Hosseini, Maryam; Schaekers, Marc; van der Veen, Marleen; Teugels, Lieve; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Yu, Hao; Jourdan, Nicolas; Schleicher, Filip; Debruyn, Haroen; Vanstreels, Kris; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020)

    • Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails 

      Veloso, Anabela; Jourdain, Anne; Radisic, Dunja; Chen, Rongmei; Arutchelvan, Goutham; O'Sullivan, Barry; Arimura, Hiroaki; Stucchi, Michele; De Keersgieter, An; Hosseini, Maryam; Hopf, Toby; D'have, Koen; Wang, Shouhua; Dupuy, Emmanuel; Mannaert, Geert; Vandersmissen, Kevin; Iacovo, Serena; Marien, Philippe; Choudhury, Subhobroto; Schleicher, Filip; Sebaai, Farid; Oniki, Yusuke; Zhou, X.; Gupta, Anshul; Schram, Tom; Briggs, Basoene; Lorant, Christophe; Rosseel, Erik; Hikavyy, Andriy; Loo, Roger; Geypen, Jef; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Soulie, Jean-Philippe; Devriendt, Katia; Chan, BT; Demuynck, Steven; Hiblot, Gaspard; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2022)

    • Semi-damascene Integration of a 2-layer MOL VHV Scaling Booster to Enable 4-track Standard Cells 

      Vega Gonzalez, Victor; Radisic, Dunja; Choudhury, Subhobroto; Tierno, Davide; Thiam, Arame; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Seidel, Felix; Decoster, Stefan; Kundu, Souvik; Tsvetanova, Diana; Peter, Antony; De Coster, Hanne; Sepulveda Marquez, Alfonso; Altamirano Sanchez, Efrain; Chan, BT; Drissi, Youssef; Sherazi, Yasser; Lee, Jae Uk; Ciofi, Ivan; Murdoch, Gayle; Nagesh, Nishanth; Hellings, Geert; Ryckaert, Julien; Biesemans, Serge; Dentoni Litta, Eugenio; Horiguchi, Naoto; Park, Seongho; Tokei, Zsolt (2022)

    • Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm 

      Belmonte, Attilio; Oh, Hyungrock; Subhechha, Subhali; Rassoul, Nouredine; Hody, Hubert; Dekkers, Harold; Delhougne, Romain; Ricotti, Lorenzo; Banerjee, Kaustuv; Vaisman Chasin, Adrian; van Setten, Michiel; Puliyalil, Harinarayanan; Pak, Murat; Teugels, Lieve; Tsvetanova, Diana; Vandersmissen, Kevin; Kundu, Shreya; Heijlen, Jeroen; Batuk, Dmitry; Geypen, Jef; Goux, Ludovic; Kar, Gouri Sankar (2021)