Browsing by author "Asenov, Asen"
Now showing items 1-20 of 21
-
'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions
Bukhori, M. F.; Grasser, Tibor; Kaczer, Ben; Reisinger, Hans; Asenov, Asen (2010-10) -
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation--Part I: CNFET Transistor Optimization
Chen, Rongmei; Chen, Lin; Liang, Jie; Cheng, Yuanqing; Elloumi, Souhir; Lee, Jaehyun; Xu, Kangwei; Georgiev, Vihar P.; Ni, Kai; Debacker, Peter; Asenov, Asen; Todri-Sanial, Aida (2022) -
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation--Part II: CNT Interconnect Optimization
Chen, Rongmei; Chen, Lin; Liang, Jie; Cheng, Yuanqing; Elloumi, Souhir; Lee, Jaehyun; Xu, Kangwei; Georgiev, Vihar P.; Ni, Kai; Debacker, Peter; Asenov, Asen; Todri-Sanial, Aida (2022) -
Circuit-level modeling of Finfet sub-threshold slope and DIBL mismatch beyond 22nm
Royer Del Barrio, Pablo; Zuber, Paul; Cheng, Binjie; Asenov, Asen; Lopez-Vallejo, M. (2013) -
Design and analysis of a new In53Ga47As implant-free quantum-well device structure
Benbakhti, Brahim; Kalna, Karol; Chan, KahHou; Asenov, Asen; Hellings, Geert; Eneman, Geert; De Meyer, Kristin; Meuris, Marc (2010) -
Design and analysis of the In sub(0.53)Ga sub(0.47)As implant-free quantum-well device structure
Benbakhti, Brahim; Kalna, Karol; Chan, KanHou; Towie, Ewan; Hellings, Geert; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Asenov, Asen (2011) -
Experimental evidences and simulations of trap generation along the percolation path
Gerrer, Louis; Hussin, Razaidi; Amoroso, Salvatore Maria; Franco, Jacopo; Weckx, Pieter; Simicic, Marko; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015) -
Impact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs
Franco, Jacopo; Kaczer, Ben; Toledano Luque, Maria; Bukhori, Muhammad Faiz; Roussel, Philippe; Grasser, Tibor; Asenov, Asen; Groeseneken, Guido (2012) -
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures
Benbakhti, Brahim; Ayubi-Moak, J.S.; Kalna, Karol; Lin, Dennis; Hellings, Geert; Brammertz, Guy; De Meyer, Kristin; Thayne, I.; Asenov, Asen (2010) -
Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated
Hussin, Razaidi; Amoroso, Salvatore; Gerrer, Louis; Kaczer, Ben; Weckx, Pieter; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Asenov, Asen (2014) -
Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
Duan, Meng; Zhang, Jian Fu; Ji, Zhigang; Zhang, Wei Dong; Kaczer, Ben; Asenov, Asen (2017) -
Monte Carlo analysis of In0.53Ga0.47As implant-free quantum-well device performance
Benbakhti, Brahim; Towie, E.; Kalna, Karol; Hellings, Geert; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Asenov, Asen (2010) -
New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation
Duan, Meng; Zhang, Jian F.; Li, Zhigang; Zhang, Wei Dong; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Groeseneken, Guido; Asenov, Asen (2013) -
Numerical analysis of the new implant-free quantum-well CMOS: dualLogic approach
Benbakhti, Brahim; Chan, KahHou; Towie, Ewan; Kalna, Karol; Riddet, Craig; Wang, Xingsheng; Eneman, Geert; Hellings, Geert; De Meyer, Kristin; Meuris, Marc; Asenov, Asen (2011) -
Reliability aware simulation flow: from TCAD calibration to circuit level analysis
Hussin, Razzaidi; Gerrer, Louis; Ding, Jie; Amaroso, Salvatore; Wang, Liping; Simicic, Marko; Weckx, Pieter; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015) -
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow
Hussin, Razaidi; Gerrer, Louis; Ding, Jie; Wang, Liping; Amoroso, Salvatore; Cheng, Binjie; Weckx, Pieter; Simicic, Marko; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015) -
TCAD-based methodology for reliability assessment of nanoscaled MOSFETs
Hussin, Razaidi; Gerrer, Louis; Amoroso, Salvatore; Wang, Liping; Weckx, Pieter; Franco, Jacopo; Vanderheyden, Annelies; Vanhaeren, Danielle; Horiguchi, Naoto; Kaczer, Ben; Asenov, Asen (2015) -
Terascale Reliable Adaptive Memory Systems Project (TRAMS)
Asenov, Asen; Canal, Ramon; Gonzalez, Antonio; Liao, Si-Yu; Miranda Corbalan, Miguel; Rubio, Antonio; Vera, Xavi; Zuber, Paul (2012) -
The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes
Kaczer, Ben; Franco, Jacopo; Toledano Luque, Maria; Roussel, Philippe; Bukhori, M. F.; Asenov, Asen; Schwarz, Benedikt; Bina, Markus; Grasser, Tibor; Groeseneken, Guido (2012) -
TRAMS : Terascale reliable adaptive memory systems
Canal, Ramon; Rubio, Antonio; Asenov, Asen; Brown, Andrew; Miranda Corbalan, Miguel; Zuber, Paul; Dobrovolny, Petr; Gonzales, Antonio; Vera, Xavier (2011)