Browsing by author "Vanherle, Wendy"
Now showing items 1-20 of 37
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3D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability
Vandooren, Anne; Franco, Jacopo; Parvais, Bertrand; Wu, Zhicheng; Witters, Liesbeth; Walke, Amey; Li, Waikin; Peng, Lan; Deshpande, Veeresh Vidyadhar; Bufler, Fabian; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Ritzenthaler, Romain; Besnard, Guillaume; Schwarzenbach, Walter; Gaudin, Gweltaz; Radu, Ionut; Nguyen, Bich-Yen; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability
Vandooren, Anne; Franco, Jacopo; Parvais, Bertrand; Wu, Zhicheng; Witters, Liesbeth; Walke, Amey; Li, Waikin; Peng, Lan; Deshpande, Veeresh Vidyadhar; Bufler, Fabian; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Ritzenthaler, Romain; Besnard, Guillaume; Schwarzenbach, Walter; Gaudin, Gweltaz; Radu, Ionut; Nguyen, Bich-Yen; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018) -
50Gb/s C-band GeSi waveguide electro-absorption modulator
Srinivasan, Ashwyn; Verheyen, Peter; Loo, Roger; De Wolf, Ingrid; Pantouvaki, Marianna; Lepage, Guy; Balakrishnan, Sadhishkumar; Vanherle, Wendy; Absil, Philippe; Van Campenhout, Joris (2016) -
An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors
Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vanherle, Wendy; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications
Vandooren, Anne; Wu, Zhicheng; Khaled, Ahmad; Franco, Jacopo; Parvais, Bertrand; Li, W.; Witters, Liesbeth; Walke, Amey; Peng, Lan; Rassoul, Nouredine; Matagne, Philippe; Jamieson, Geraldine; Inoue, Fumihiro; Nguyen, B.Y.; Debruyn, Haroen; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Radisic, Dunja; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Besnard, G.; Schwarzenbach, W.; Gaudin, G.; Radu, Iuliana; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Ryckaert, Julien; Collaert, Nadine; Mocuta, Dan (2019) -
Epitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °C
Loo, Roger; Vanherle, Wendy; Arimura, Hiroaki; Cott, Daire; Witters, Liesbeth; Douhard, Bastien; Mitard, Jerome; Collaert, Nadine (2017-05) -
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge FIN structures
Loo, Roger; Arimura, Hiroaki; Cott, Daire; Witters, Liesbeth; Pourtois, Geoffrey; Schulze, Andreas; Douhard, Bastien; Vanherle, Wendy; Richard, Olivier; Favia, Paola; Eneman, Geert; Mitard, Jerome; Collaert, Nadine (2017-07) -
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge Fin structures
Loo, Roger; Arimura, Hiroaki; Cott, Daire; Witters, Liesbeth; Pourtois, Geoffrey; Schulze, Andreas; Douhard, Bastien; Vanherle, Wendy; Eneman, Geert; Richard, Olivier; Favia, Paola; Mitard, Jerome; Mocuta, Dan; Langer, Robert; Collaert, Nadine (2017-09) -
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures
Loo, Roger; Arimura, Hiroaki; Cott, Daire; Witters, Liesbeth; Pourtois, Geoffrey; Schulze, Andreas; Douhard, Bastien; Vanherle, Wendy; Eneman, Geert; Richard, Olivier; Favia, Paola; Mitard, Jerome; Mocuta, Dan; Langer, Robert; Collaert, Nadine (2018-02) -
Epitaxial Si, SiGe and Ge for high-performance devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Wang, Gang; Vanherle, Wendy; Gencarelli, Federica; Nguyen, Duy; Rosseel, Erik; Souriau, Laurent; Rondas, Dirk; Dekoster, Johan; Caymax, Matty (2010) -
First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers
Vandooren, Anne; Franco, Jacopo; Wu, Zhicheng; Parvais, Bertrand; Li, Waikin; Walke, Amey; Peng, Lan; Deshpande, Paru; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Ritzenthaler, Romain; Mitard, Jerome; Ragnarsson, Lars-Ake; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Mocuta, Dan; Ryckaert, Julien; Collaert, Nadine (2018) -
Ge and GeSn chemical vapor deposition for Si based photonic devices
Vincent, Benjamin; Gencarelli, Federica; Vanherle, Wendy; Loo, Roger; Caymax, Matty; Van Campenhout, Joris (2011) -
Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation
Arimura, Hiroaki; Sioncke, Sonja; Cott, Daire; Mitard, Jerome; Conard, Thierry; Vanherle, Wendy; Loo, Roger; Favia, Paola; Bender, Hugo; Meersschaut, Johan; Witters, Liesbeth; Mertens, Hans; Franco, Jacopo; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; Heyns, Marc; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2015) -
Ge-on-si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared
Malik, Aditya Singh; Dwivedi, Sarvagya Paavan; Van Landschoot, Liesbet; Muneeb, Muhammad; Shimura, Yosuke; Lepage, Guy; Van Campenhout, Joris; Vanherle, Wendy; Van Opstal, Tinneke; Loo, Roger; Roelkens, Gunther (2014-11) -
Growth of high Ge content SiGe on (110) oriented Si wafers
Hikavyy, Andriy; Vanherle, Wendy; Dekoster, Johan; Bender, Hugo; Moussa, Alain; Witters, Liesbeth; Hoffman, T.; Loo, Roger (2011) -
Growth of high Ge content SiGe on (110) oriented Si wafers
Hikavyy, Andriy; Vanherle, Wendy; Vincent, Benjamin; Dekoster, Johan; Bender, Hugo; Moussa, Alain; Witters, Liesbeth; Hoffmann, Thomas Y.; Loo, Roger (2012) -
Hetero Ge/SI and Si1-xGex/Si nanowires for vertical microelectronics devices
Iacopi, Francesca; Rooyackers, Rita; Vandooren, Anne; Vanherle, Wendy; Takeuchi, Shotaro; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Leonelli, Daniele; Arstila, Kai; Bender, Hugo; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2009) -
High Ge content SiGe selective processes for manufacturing source/drain in the next generations of pMOS transistors
Hikavyy, Andriy; Vanherle, Wendy; Witters, Liesbeth; Vincent, Benjamin; Dekoster, Johan; Loo, Roger (2012) -
High Ge content SiGe selective processes for manufacturing source/drain in the next generations of pMOS transistors
Hikavyy, Andriy; Vanherle, Wendy; Witters, Liesbeth; Vincent, Benjamin; Dekoster, Johan; Loo, Roger (2012) -
High Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistors
Hikavyy, Andriy; Vanherle, Wendy; Witters, Liesbeth; Vincent, Benjamin; Dekoster, Johan; Loo, Roger (2013)