Browsing by author "Marcon, Denis"
Now showing items 1-20 of 110
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200mm GaN-on-Si epitaxy and e-mode device technology
Marcon, Denis; Saripalli, Yoga; Decoutere, Stefaan (2015) -
2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Srivastava, Puneet; Cheng, Kai; Das, Jo; Van Hove, Marleen; Leys, Maarten; Marcon, Denis; Visalli, Domenica; Geens, Karen; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2012) -
A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
Das, Jo; Everts, Jordi; Van den Keybus, Jeroen; Van Hove, Marleen; Visalli, Domenica; Srivastava, Puneet; Marcon, Denis; Cheng, Kai; Leys, Maarten; Decoutere, Stefaan; Driesen, Johan; Borghs, Gustaaf (2011) -
A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Marcon, Denis; Kauerauf, Thomas; Medjdoub, Farid; Das, Jo; Van Hove, Marleen; Srivastava, Puneet; Cheng, Kai; Leys, Maarten; Mertens, Robert; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Borghs, Gustaaf (2010-12) -
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, A.; Marcon, Denis; Malinowski, Pawel; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E. (2012) -
AlGaN/GaN field effect transistors for power electronics – Effect of finite GaN layer thickness on thermal characteristics
Hodges, Chris; Anaya Calvo, J.; Stoffels, Steve; Marcon, Denis; Kubal, Martin (2013-11) -
AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
Zanoni, Enrico; Meneghini, Matteo; Chini, Alessandro; Marcon, Denis; Meneghesso, Gaudenzio (2013) -
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation
Marino, F.A.; Bisi, D.; Meneghini, M.; Verzellesi, G.; Zanoni, E.; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, G. (2015) -
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017) -
Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance
Marcon, Denis; Viaene, John; Stoffels, Steve; Vanaverbeke, Fre; Kang, Xuanwu; Lenci, Silvia; Srivastava, Puneet; Decoutere, Stefaan (2012) -
Breakdown investigation in GaN-based MIS-HEMT devices
Marino, Fabio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, Gaudio (2014) -
Comparison of AlGaN/GaN MISHEMT powerbar designs
Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2014-02) -
Comparison of AlGaN/GaN MISHEMT powerbar designs
Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2013-08) -
Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs
Wu, Tian-Li; Marcon, Denis; Zahid, Mohammed; Van Hove, Marleen; Decoutere, Stefaan; Groeseneken, Guido (2013) -
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; Lin, Dennis; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Coupled electro-thermal model for simulation of GaN power switching HEMTs in circuit simulators
Stoffels, Steve; Oprins, Herman; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Van Hove, Marleen; Decoutere, Stefaan (2012) -
Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions
Zanoni, Enrico; Meneghini, Matteo; Stocco, Antonio; Marcon, Denis; Bertin, Marco; Silvestri, Riccardo; Ferretti, Marco; Rampazzo, Fabiana; Meneghesso, Gaudenzio (2012) -
Degradation of AlGaN/GaN HEMTs below the "critical voltage": a time-dependent analysis
Meneghini, Matteo; Stocco, Antonio; Bertin, M; Marcon, Denis; Meneghesso, Gaudenzio; Zanoni, Enrico (2012) -
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface
Meneghini, Matteo; Bertin, Marco; Stocco, Antonio; dal Santo, Gabriele; Marcon, Denis; Malinowski, Pawel; Chini, Alessandro; Meneghesso, Gaudenzio; Zanoni, Enrico (2013)